Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons


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Electrical properties of radiation-produced defects in p-Ge irradiated with MeV electrons and protons are investigated. The dominant defects in electron-irradiated p-Ge were found to be neutral for the most part, whereas they are electrically active in proton-irradiated materials. Evidently, the reactions between impurity atoms and intrinsic point defects leading to formation of secondary Ga-related defects in electron-and proton-irradiated p-Ge appear to be distinct. Production rates of radiation defects in n-Ge and p-Ge are compared. A marked difference in the removal rates of shallow donor/acceptor impurity states, at least by an order-of-magnitude, is thought to be due to greatly enhanced annihilation of Frenkel pairs in p-type Ge.



Solid State Phenomena (Volume 242)

Edited by:

P. Pichler






V. V. Emtsev et al., "Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons", Solid State Phenomena, Vol. 242, pp. 316-321, 2016

Online since:

October 2015




* - Corresponding Author

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