Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons

Abstract:

Article Preview

Electrical properties of radiation-produced defects in p-Ge irradiated with MeV electrons and protons are investigated. The dominant defects in electron-irradiated p-Ge were found to be neutral for the most part, whereas they are electrically active in proton-irradiated materials. Evidently, the reactions between impurity atoms and intrinsic point defects leading to formation of secondary Ga-related defects in electron-and proton-irradiated p-Ge appear to be distinct. Production rates of radiation defects in n-Ge and p-Ge are compared. A marked difference in the removal rates of shallow donor/acceptor impurity states, at least by an order-of-magnitude, is thought to be due to greatly enhanced annihilation of Frenkel pairs in p-type Ge.

Info:

Periodical:

Solid State Phenomena (Volume 242)

Edited by:

P. Pichler

Pages:

316-321

DOI:

10.4028/www.scientific.net/SSP.242.316

Citation:

V. V. Emtsev et al., "Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons", Solid State Phenomena, Vol. 242, pp. 316-321, 2016

Online since:

October 2015

Export:

Price:

$38.00

* - Corresponding Author

[1] V.V. Emtsev, A.M. Ivanov, V.V. Kozlovski, A.A. Lebedev, G.A. Oganesyan, N.B. Strokan, G. Wagner, Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-type, Semiconductors, 46 (2012).

DOI: 10.1134/s1063782612040069

[2] V.V. Emtsev, N.V. Abrosimov, V.V. Kozlovski, G.A. Oganesyan, Vacancy-donor pairs and their formation in irradiated n-Si, Semiconductors, 48 (2014) 1438-1443.

DOI: 10.1134/s1063782614110098

[3] V. V. Emtsev, G. A. Oganesyan, N. V. Abrosimov, V.V. Kozlovski, Production and annealing of defects in proton-irradiated n-Ge, Solid State Phenomena, 205-206 (2014) 422-426.

DOI: 10.4028/www.scientific.net/ssp.205-206.422

[4] A. Colder, M. Levalois, P. Marie, Study of electron, proton and swift heavy ion irradiation of n-type germanium using deep level transient spectroscopy, J. Appl. Phys., 88 (2000) 3082-3084.

DOI: 10.1063/1.1287764

[5] J. Fage-Pedersen, A. Nylandsted Larsen, A. Mesli, Irradiation-induced defects in Ge studied by transient spectroscopies, Phys. Rev. B, 62 (2000-I) 10 116-10 125.

DOI: 10.1103/physrevb.62.10116

[6] M. Christian Pedersen, A. Nylandsted Larsen, A. Mesli, Divacancy defects in germanium studied using deep-level transient spectroscopy, Phys. Rev. B, 82 (2010) 075203 1-6.

DOI: 10.1103/physrevb.82.075203

[7] J.S. Blakemore, Semiconductor Statistics, Pergamon Press, (1962).

[8] V.V. Emtsev, T.V. Mashovets, S.M. Ryvkin, The role of group-V impurities in the formation of defects in germanium under γ-irradiation, in: Radiation Damage and Defects in Semiconductors, Conf. Ser. Number 16, The Institute of Physics, London and Bristol, 1973, pp.17-25.

In order to see related information, you need to Login.