Gettering and Defect Engineering in Semiconductor Technology XVI
Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany.
The 71 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials
Annealing, Carbon-Hydrogen Complexes, Crystal Growth Technology, Defect Monitoring, Dislocations Properties, Electronic Properties, Metastable Defects, Multicrystalline Silicon Improvement, Semiconductors, Solidification Technique, Spectroscopy, ZnO Nanoparticle Formation
Review from Ringgold Inc., ProtoView: Editor P. Pichler presents students, academics, researchers, and professionals working in a wide variety of contexts with a collection of peer-reviewed papers selected from research presented at the Gettering and Defect Engineering in Semiconductor Technology conference held in September of 2015 in Germany. The editor has organized the contributions that make up the main body of the text in eleven chapters devoted to growth of mono- and multi-crystalline silicon, passivation and defect studies in solar cells, intrinsic point defects and dislocations in silicon, and a wide variety of other related subjects.
— Mechanical engineering