Paper Title
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Authors: Farid Sebaai, Liesbeth Witters, Frank Holsteyns, Kurt Wostyn, Jens Rip, Yoshida Yukifumi, Ruben R. Lieten, Steven Bilodeau, Emanuel Cooper
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:For the Ge nanowire formation in a gate-all-around (GAA) integration scheme, a selective etch of Si0.5Ge0.5 or...
3
Authors: Philippe Garnier
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:The silicon surface passivation with diluted HF solutions is hereby explained. Without a very stable, correct Si-H surface passivation, a...
8
Authors: Philippe Garnier
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:“HF Last” process are widely used as pre epi cleans. They enable a Si-H surface to grow a perfect Si layer by epitaxy. Nonetheless, such...
13
Authors: Yong Gen He, Huan Xin Liu, Jia Lei Liu, Jin Gang Wu, Christian Haigermoser, Feng Liu, Mei Sheng Zhou, Wei Lu
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:Tetramethylammonium hydroxide (TMAH) is a common etchant for Sigma shape formation in IC manufacturing. The impact of oxygen dissolved in...
18
Authors: Yukifumi Yoshida, Hiroaki Takahashi, Masanobu Sato, Jim Snow, Farid Sebaai, Frank Holsteyns
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:The impact of rinsing liquid for Germanium surface after wet chemical treatment is described. The different Ge loss after processing with...
22
Authors: Toru Masaoka, Nobuko Gan, Yu Fujimura, Yuichi Ogawa, Kurt Wostyn, Antoine Pacco, Yukifumi Yoshida, Frank Holsteyns
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:Ultrapure water contains dilute hydrogen peroxide as an impurity. In order to clarify an impact of the dilute hydrogen peroxide on cleaning...
27
Authors: Dan Alvarez Jr, Jeffrey J. Spiegelman, Andrew C. Kummel, Mary Edmonds, Kasra Sardashti, Steven Wolf, Russell Holmes
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:In Situ gas phase passivation methods can enable new channel materials. Toward this end pure anhydrous HOOH and H2NNH2 membrane gas...
31
Authors: Gilbert Okorn, Roland Fischer, Beate Steller, Philipp Engesser, Harald Okorn-Schmidt
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:Tristrimethylsilylgermane, (Me3Si)3GeH, was employed as a molecular model compound for hydrogen terminated Ge(111)...
36
Authors: John Papalia, Nathan Marchack, Robert Bruce, Hiroyuki Miyazoe, Sebastian Engelmann, Eric A. Joseph
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:Over the course of the past few years, the semiconductor industry has continued to invent and innovate profoundly to adhere to Moore’s Law...
41
Showing 1 to 10 of 69 Paper Titles