Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler

Abstract:

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A non-destructive metrology technique for critical dimension of Fin structure is important for better device characterization and development for improving yield. Due to extremely small dimension with high complexity in FinFET a new metrology solution needs to be evaluated. In-line atomic resolution profiler was performed to provide a suitable metrology for oxide recess metrology in Fin process. The technique could measure accurately the height and CD of Fin structures, which has the space with of 25 nm and the height of 60 nm. The uniformity of recess height could be measured, which could be interpreted by loading effect of etch process. High long term repeatability of the technique was achieved for process monitoring purpose.

Info:

Periodical:

Solid State Phenomena (Volume 255)

Edited by:

Paul W. Mertens, Marc Meuris and Marc Heyns

Pages:

304-308

Citation:

T. G. Kim et al., "Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler", Solid State Phenomena, Vol. 255, pp. 304-308, 2016

Online since:

September 2016

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Price:

$38.00

* - Corresponding Author

[1] A. Redolfi, E. Sleeckx, K. Devriendt, D. Shamiryan, T. Vandeweyer, N. Horiguchi, M. Togo, J.M.D. Wouter, M. Jurczak,T. Hoffmann, A. Cockburn, V. Gravey, D.L. Diehl: Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on (2011).

DOI: https://doi.org/10.1109/ulis.2011.5758015