Digital Etching of GaAs Materials: Comparison of Oxidation Treatments

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Oxidation of a GaAs surface was performed with liquid H2O2, gaseous O2 and O3 in order to identify the best solution for digital etching. The oxide layer formed with H2O2 is Garich and exhibits surface roughening which can be understood by oxide hydrolysis/condensation model. Roughening makes aqueous H2O2 irrelevant as an oxidizing agent for repeated oxidation steps. On the other hand, a smooth oxide layer can be obtained with gaseous O2 and O3. Thickness of the formed oxide layer is controlled by time exposure to the oxidizing agent. The nature of the oxide was analyzed by XRay Photo-electron Spectroscopy and is also timedependent.

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Periodical:

Solid State Phenomena (Volume 255)

Edited by:

Paul W. Mertens, Marc Meuris and Marc Heyns

Pages:

61-66

Citation:

M. Rebaud et al., "Digital Etching of GaAs Materials: Comparison of Oxidation Treatments", Solid State Phenomena, Vol. 255, pp. 61-66, 2016

Online since:

September 2016

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$38.00

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