Atomic Layer Deposition of TiN below 600 K Using N2H4
Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2 with TiCl4 and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2 because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4 producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.
Paul Mertens, Marc Meuris and Marc Heyns
A. Hinckley and A. Muscat, "Atomic Layer Deposition of TiN below 600 K Using N2H4", Solid State Phenomena, Vol. 282, pp. 232-237, 2018