Atomic Layer Deposition of TiN below 600 K Using N2H4


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Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2 with TiCl4 and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2 because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4 producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.



Solid State Phenomena (Volume 282)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns




A. Hinckley and A. Muscat, "Atomic Layer Deposition of TiN below 600 K Using N2H4", Solid State Phenomena, Vol. 282, pp. 232-237, 2018

Online since:

August 2018




* - Corresponding Author

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