Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes

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Periodical:

Solid State Phenomena (Volumes 32-33)

Edited by:

H.G. Grimmeiss, M. Kittler and H. Richter

Pages:

595-600

DOI:

10.4028/www.scientific.net/SSP.32-33.595

Citation:

K. Schmalz et al., "Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes", Solid State Phenomena, Vols. 32-33, pp. 595-600, 1993

Online since:

December 1993

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$35.00

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