DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing

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Periodical:

Solid State Phenomena (Volumes 47-48)

Edited by:

H. Richter, M. Kittler and C. Claeys

Pages:

327-352

DOI:

10.4028/www.scientific.net/SSP.47-48.327

Citation:

J.G. Park and G. A. Rozgonyi, "DRAM Wafer Qualification Issues: Oxide Integrity vs. D-Defects, Oxygen Precipitates and High Temperature Annealing", Solid State Phenomena, Vols. 47-48, pp. 327-352, 1996

Online since:

July 1995

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$35.00

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