Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique

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Periodical:

Solid State Phenomena (Volumes 63-64)

Edited by:

M. Kittler, O. Breitenstein, A. Endrös, W. Schröter

Pages:

407-412

DOI:

10.4028/www.scientific.net/SSP.63-64.407

Citation:

H. Tomokage et al., "Defect Characterization in Metal-Oxide-Semiconductor Field-Effect-Transistors with Trench Gates by Electron Beam-Induced Current Technique", Solid State Phenomena, Vols. 63-64, pp. 407-412, 1998

Online since:

December 1998

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