Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 69-70)

Edited by:

H.G. Grimmeiss, L. Ask, M. Kleverman, M. Kittler and H. Richter

Pages:

291-296

DOI:

10.4028/www.scientific.net/SSP.69-70.291

Citation:

M. Yli-Koski et al., "Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing", Solid State Phenomena, Vols. 69-70, pp. 291-296, 1999

Online since:

August 1999

Export:

Price:

$35.00

In order to see related information, you need to Login.