Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current

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Periodical:

Solid State Phenomena (Volumes 82-84)

Edited by:

V. Raineri, F. Priolo, M. Kittler and H. Richter

Pages:

807-0

DOI:

10.4028/www.scientific.net/SSP.82-84.807

Citation:

C. Grazzi et al., "Minority Carrier Diffusion Lengths in Silicon Doped Gallium Nitride Thin Films Measured by Electron Beam Induced Current", Solid State Phenomena, Vols. 82-84, pp. 807-0, 2002

Online since:

November 2001

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$35.00

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