Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices

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Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

345-350

DOI:

10.4028/www.scientific.net/SSP.93.345

Citation:

T. Kamiya et al., "Effects of Oxidation and Annealing Temperature on Grain Boundary Properties in Polycrystalline Silicon Probed Using Nanometre-Scale Point-Contact Devices", Solid State Phenomena, Vol. 93, pp. 345-350, 2003

Online since:

June 2003

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$35.00

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