Electrical Properties of High Value Doped Polysilicon-Based Resistors

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volume 93)

Edited by:

T. Fuyuki, T. Sameshima, H.P. Strunk and J.H. Werner

Pages:

435-440

DOI:

10.4028/www.scientific.net/SSP.93.435

Citation:

E. Carvou et al., "Electrical Properties of High Value Doped Polysilicon-Based Resistors", Solid State Phenomena, Vol. 93, pp. 435-440, 2003

Online since:

June 2003

Export:

Price:

$35.00

In order to see related information, you need to Login.