Microstructure and Electrical Properties of Doped ZnO Varistor Nanomaterials

Abstract:

Article Preview

A sol-gel method of preparation doped ZnO varistor nanomaterials is described, The influences of doped ZnO nanomaterials for varistor microstructure and electrical properties (nonlinear coefficient α, breakdown voltage V1mA , dielectric constant ε, and dielectric loss tan δ) are investigated. Compared with the conventional mixed oxide technique, varistor ceramic of prepared by nanometer materials showed a more homogeneous microstructure, smaller grain sizes, higher densities and excellent electrical properties.

Info:

Periodical:

Solid State Phenomena (Volumes 99-100)

Edited by:

Witold Lojkowski and John R. Blizzard

Pages:

127-132

DOI:

10.4028/www.scientific.net/SSP.99-100.127

Citation:

X. Kang et al., "Microstructure and Electrical Properties of Doped ZnO Varistor Nanomaterials", Solid State Phenomena, Vols. 99-100, pp. 127-132, 2004

Online since:

July 2004

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.