Papers by Author: Anna Cavallini

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Authors: Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini
Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, G. Martinelli, D. Palmeri, Andrea Parisini, G. Sartori
Authors: Antonio Castaldini, Daniela Cavalcoli, Anna Cavallini, T. Minarelli, E. Susi
Authors: Antonio Castaldini, Anna Cavallini, Marco Rossi, M. Cocuzza, C. Ricciardi
Abstract: We report on the investigation of electrical properties of polycrystalline 3C-SiC thin films deposited on oxidized Si by low pressure chemical vapor deposition (LPCVD) to obtain bi-layer structures [Si(100)/SiO2/poly 3C-SiC] for pressure sensors and micro-electromechanical system (MEMS) applications. Polycrystalline 3C-SiC films have been preliminary characterized in their compositional, structural, morphological and electrical properties. Moreover, metal contact definition has been carefully optimized by transmission line method (TLM) analyses performed at different temperatures. We focuses the attention on the evaluation of the bulk resistivity (ρ), the specific contact resistivity (ρc) and their behavior dependence on the temperature because these are the characteristics of major importance for the fabrication of pressure sensors or MEMS.
Authors: Antonio Castaldini, Anna Cavallini
Authors: Filippo Nava, P. Vanni, G. Verzellesi, Antonio Castaldini, Anna Cavallini, L. Polenta, Roberta Nipoti, C. Donolato
Authors: Mariaconcetta Canino, Antonio Castaldini, Anna Cavallini, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi
Abstract: This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.
Authors: Luciano Scaltrito, Samuele Porro, Fabrizio Giorgis, P. Mandracci, M. Cocuzza, C. Fabrizio Pirri, C. Ricciardi, Sergio Ferrero, G. Richieri, C. Sgorlon, Luigi Merlin, Anna Cavallini, Antonio Castaldini
Authors: Filippo Fabbri, Francesco Moscatelli, Antonella Poggi, Roberta Nipoti, Anna Cavallini
Abstract: Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis.
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