Papers by Author: Anne Henry

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Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén
Abstract: We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that all 3C inclusions were generated at the interface between the substrate and the epitaxial layer, and no 3C inclusions were initiated at later stages of the growth.
Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel
Abstract: A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.
Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Anne Henry, Björn Magnusson, Alexsandre Ellison, Erik Janzén
Authors: Anne Henry, E. Sörman, Sven Andersson, W.M. Chen, Bo Monemar, Erik Janzén
Authors: Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett
Authors: Urban Forsberg, Örjan Danielsson, Anne Henry, Margareta K. Linnarsson, Erik Janzén
Authors: Sadia Muniza Faraz, Muhammed Naveed Alvi, Anne Henry, Omer Nour, Magnus Willander, Qamar Ul Wahab
Abstract: The effects of post fabrication annealing on the electrical characteristics of n-ZnO/p-Si heterostructure are studied. The nanorods of ZnO are grown by aqueous chemical growth (ACG) technique on p-Si substrate and ohmic contacts of Al/Pt and Al are made on ZnO and Si. The devices are annealed at 400 and 600 °C in air, oxygen and nitrogen ambient. The characteristics are studied by photoluminescence (PL), current–voltage (I-V) and capacitance - voltage (C-V) measurements. PL spectra indicated higher ultraviolet (UV) to visible emission ratio with a strong peak of near band edge emission (NBE) centered from 375-380 nm and very weak broad deep-level emissions (DLE) centered from 510-580 nm. All diodes show typical non linear rectifying behavior as characterized by I-V measurements. The results indicated that annealing in air and oxygen resulted in better electrical characteristics with a decrease in the reverse current.
Authors: T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén
Authors: Mads Mikelsen, Ulrike Grossner, Jan H. Bleka, Edouard V. Monakhov, Bengt Gunnar Svensson, Rositza Yakimova, Anne Henry, Erik Janzén, Alexander A. Lebedev
Authors: Milan Yazdanfar, Stefano Leone, Henrik Pedersen, Olof Kordina, Anne Henry, Erik Janzén
Abstract: Epitaxial growth of 4H-SiC on 8º off-axis substrates has been performed under different condition during the temperature ramp up in order to study the effect on the carrot defect. The study was done in a hot wall chemical vapor deposition reactor using the single molecule precursor methyltrichlorosilane (MTS). During the temperature ramp up, a small flow of HCl or C2H4 was added to the H2 ambient to study different surface etching conditions. The best result was obtained when HCl was added from 1175 to 1520 °C during the ramp up to growth temperature (1575 °C).
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