Papers by Author: Byung Don Yoo

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Authors: Hyoun Woo Kim, Jong Woo Lee, Jeong Whan Han, Hyung Sun Kim, Mok Soon Kim, Byung Don Yoo, Sun Keun Hwang
Abstract: Indium oxide (In2O3) films were successfully grown on LiAlO2 substrates using the triethylindium (TEI) as a precursor in the presence of oxygen in the metalorganic chemical vapor deposition process. We have established the correlation between the substrate temperature and the structural properties. The grain structures were clearly shown on the surface of the films deposited at 350°C. The root mean square (RMS) surface roughness of the In2O3 films increased with increasing the substrate temperature. A photoluminescence measurement at room temperature exhibited a yellow-green emission band centered at 585 nm.
Authors: Jong Woo Lee, Hyoun Woo Kim, Jeong Whan Han, Mok Soon Kim, Byung Don Yoo, M.H. Kim, C.H. Lee, C.H. Lee, Cheol Ho Lim, Sun Keun Hwang, C. Lee, D.J. Chung, S.G. Park, S.G. Lee, B.H. O, J. Kim, S.P. Chang, S.H. Lee, Seung Yong Chai, Wan In Lee, S.E. Park, K. Kim, D.K. Choi, C.W. Chung
Abstract: We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material.
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