Papers by Author: Chong Lin Chen

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Authors: Ming Liu, Chun Rui Ma, Eric Enriquez, Xing Xu, Shan Yong Bao, Chong Lin Chen
Abstract: Highly epitaxial LaBaCo2O5+δ thin films are successfully fabricated and annealed in different ambient conditions. The LaBaCo2O5+δ thin films under O2 and N2 annealing atmosphere are c-axis oriented with the interface relationship of [100]LBCO//[10LAO and (001)LBCO//(001)LAO. Annealing the film in N2 ambient significantly increases the resistivity and magnetoresistance comparing to the films annealed in O2 ambient. The magnetoresistance after annealing in N2 is almost more than twice of the magnetoresistance after annealing in O2. The result revealed that the electrical properties of the film are highly influenced by annealing atmosphere, indicating that the physical properties can be controlled by adjusting the post annealing atmosphere.
Authors: Jiechao Jiang, Efstathios I. Meletis, Z. Yuan, Jian Liu, Jenny Weaver, Chong Lin Chen, B. Lin, V. Giurgiutiu, R.Y. Guo, A.S. Bhalla, D. Liu, K.W. White
Abstract: We report the fabrication of the orientation preferred structures in BaTiO3 thin films on Ni substrates using pulsed laser deposition. Transmission electron microscopy studies showed that the films consist of crystalline structures of tetragonal BaTiO3. More than 60% of BaTiO3 grains in the films exhibit nearly the same crystallographic orientation with their a-axis lying in the film plane and the [011] direction parallel to the growth direction. Such orientation preferred structures were grown on a Ni nanocrystalline buffer layer. This result demonstrated the possibility of approximating an oriented single crystalline ceramic oxide structures on metallic substrates.
Authors: Hong Liang Lu, Shuang Qi Song, Xiao Feng Gu, Shu Li He, Chong Lin Chen, Gang Bing Song, Zhong Hou Cai, Hai Ming Guo, Hong Jun Gao, Li Sun
Abstract: Direct integration of ferroelectrics with semiconductors is critical to lower the cost and simplify the production procedures for data storage/processing components and miniature sensor/actuator development. By optimizing magnetron sputtering parameters, highly <001> preferential growth of BaTiO3 thin films with reproducible ferroelectric responses have been achieved on Si (001) substrates. The thin film ferroelectric characteristics were systematically studied by piezoresponse force microscopy, and a piezoelectric coefficient d33 of 24pm/V has been measured. It is found that the scanning tip sidewall angle and cantilever tilt affect the contour and size of polarized area.
Authors: Jiechao Jiang, J. He, Efstathios I. Meletis, Jian Liu, Z. Yuan, Chong Lin Chen
Abstract: Two-dimensional in-plane interface structures of highly epitaxial perovskite (La,Ca)MnO3 (LCMO) and (Pb,Sr)TiO3 (PSTO) thin films on salt-rock type MgO substrate were studied using Transmission Electron Microscopy (TEM). Cross-section TEM studies revealed that both LCMO and PSTO films are good single crystal quality and have atomic sharp interface with respect to the MgO substrate with -6.4% and -6.2% lattice mismatch, respectively. Electron Diffraction Patterns (EDPs) of plan-view LCMO/MgO and PSTO/MgO interfaces exhibit double diffraction spots. An analytical approach was employed using double diffraction to study the two-dimensional in-plane interfaces of perovskite structure films on the salt-rock type substrate. The lattice mismatch near the interface regions was determined using EDPs of the plan-view interfaces and found to be -8.0% for LCMO/MgO and -7.14% for PSTO. Both latter values are larger than those obtained using cross-section TEM. Studies of the sharpness of double diffraction spots and plan-view high resolution (HR) TEM brought a conclusion that the PSTO film is well commensurate with the MgO substrate over large areas, whereas LCMO film is only locally commensurate with the substrate. These studies provide additional evidence to our previous observations that plan-view TEM of the interface is able to provide critical and valuable information that is lacking from the cross-section TEM analysis.
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