Papers by Author: Christer Hallin

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Authors: Wei Ji, Peter M. Lofgren, Christer Hallin, Chun-Yuan Gu
Authors: Qamar-ul Wahab, Hajime Kosugi, Hiroshi Yano, Christer Hallin, Tsunenobu Kimoto, Hiroyuki Matsunami
Authors: Alexander Syrkin, Vladimir Dmitriev, V. Soukhoveev, Marina G. Mynbaeva, Roumen Kakanakov, Christer Hallin, Erik Janzén
Authors: Erik Danielsson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner, Christer Hallin
Abstract: 4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a good base ohmic contact. A remaining p+ regrowth spacer at the edge of the base-emitter junction is proposed to explain a low current gain of 6 for the BJTs. A breakdown voltage of 1000 V was obtained for devices with Al implanted JTE.
Authors: H.Ö. Ólafsson, Christer Hallin, Einar Ö. Sveinbjörnsson
Authors: E. Sörman, Nguyen Tien Son, W.M. Chen, Christer Hallin, J. Lennart Lindström, Erik Janzén
Authors: Z. Zolnai, Nguyen Tien Son, Björn Magnusson, Christer Hallin, Erik Janzén
Authors: Mike F. MacMillan, L. Hultman, Christer Hallin, Ivan G. Ivanov, Anne Henry, Erik Janzén, S.A. Galloway
Authors: Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén
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