Papers by Author: Didier Chaussende

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Authors: Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende, Erik Janzén
Abstract: The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.
Authors: P. Dupel, Thierry Chassagne, Didier Chaussende, Yves Monteil, François Cauwet, Etienne Bustarret, A. Deneuville, G. Bentoumi, Eugénie Martinez, B. Daudin, G. Feuillet
Authors: Ludovic Charpentier, Francis Baillet, Didier Chaussende, Etienne Pernot, Michel Pons, Roland Madar
Authors: Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil
Authors: Kanaparin Ariyawong, Christian Chatillon, Elisabeth Blanquet, Jean Marc Dedulle, Didier Chaussende
Abstract: Numerical simulation appeared till now as the only tool able to describe the SiC growth by PVT process, while the chemistry of the Si-C system and its coupling to mass transfer were not considered in a satisfactory way. To assess the chemistry of SiC crystal, the coupling of numerical and thermodynamic calculations computed by FEM, and by treating SiC as a solid solution, respectively, is presented. This enables the possibilities to control the activity of each component in SiC crystal during the growth. The link between growth conditions and SiC crystal chemistry could be one of the key issues to link the growth and the occurrence of cubic or hexagonal polytypes.
Authors: Patrice Vicente, Etienne Pernot, Didier Chaussende, Jean Camassel
Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
Abstract: Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal <0001> seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiC single crystal almost free of DPB [1]. In this work we present the results of a multi-scale investigation of such crystals. Using birefringence microscopy, EBSD and HR-TEM, we find evidence of a continuous improvement of the crystal quality with increasing thickness in the most defected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF density remains rather constant from the interface to the surface. The LTPL spectra collected at 5K on the upper part of samples present a nice resolution of multiple bound exciton features (up to m=5) which clearly shows the high (electronic) quality of our 3C-SiC material.
Authors: Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
Authors: Didier Chaussende, Frédéric Mercier, Roland Madar, Michel Pons
Abstract: We have investigated through birefringence microscopy, a set of 3C-SiC crystals grown with the CF-PVT process, starting from different seeds and under different growth conditions. Through self nucleation experiments, the stable growth of very high quality 3C-SiC crystals at high temperature (2100°C) and at high rate (roughly 0.2 mm/h) is demonstrated. The possibility to develop bulk growth of 3C-SiC crystals is discussed.
Authors: Laurent Auvray, Didier Chaussende, Francis Baillet, Ludovic Charpentier, Michel Pons, Roland Madar
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