Papers by Author: Erik Janzén

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Authors: Anne Henry, Xun Li, Henrik Jacobson, Sven Andersson, Alexandre Boulle, Didier Chaussende, Erik Janzén
Abstract: The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 µm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray techniques and photoluminescence are compared for the evaluation of the crystal quality and purity of the layers.
Authors: Jawad ul Hassan, Peder Bergman, Anne Henry, Henrik Pedersen, Patrick J. McNally, Erik Janzén
Abstract: We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that all 3C inclusions were generated at the interface between the substrate and the epitaxial layer, and no 3C inclusions were initiated at later stages of the growth.
Authors: Alexander Syrkin, Vladimir Dmitriev, V. Soukhoveev, Marina G. Mynbaeva, Roumen Kakanakov, Christer Hallin, Erik Janzén
Authors: Peter Deák, Adam Gali, Z. Hajnal, Thomas Frauenheim, Nguyen Tien Son, Erik Janzén, Wolfgang J. Choyke, P. Ordejón
Authors: Joakim Eriksson, Niklas Rorsman, Herbert Zirath, Anne Henry, Björn Magnusson, Alexsandre Ellison, Erik Janzén
Authors: P. Råback, Risto M. Nieminen, Rositza Yakimova, M. Tuominen, Erik Janzén
Authors: Michael Winters, Mattias Thorsell, Jawad ul Hassan, Niklas Rorsman, Erik Janzén, Herbert Zirath
Abstract: Abstract. The aim of this study is to compare DC characteristics of ‘as-grown’ and hydrogen (H)-intercalated epitaxial graphenes on SiC substrates [1,2]. Epitaxial graphene is grown on SiC at 1400-1600C, and H-intercalation is performed via in-situ introduction of Hydrogen during the graphitization process [6]. The fabrication processing steps used to define test structures are identical for the two materials. Results on the DC behaviour and uniformity issues with respect to both materials are reported. As-grown material behaves as a linear resistance, while H-intercalated demonstrates a non-linear characteristic. Hysteresis effects and time dependent behaviors are also observed in both materials. Extensive Hall measurements are performed on both materials with the aim of providing a qualitative understanding of material uniformity in both epi-graphenes.
Authors: E. Sörman, Nguyen Tien Son, W.M. Chen, Christer Hallin, J. Lennart Lindström, Erik Janzén
Authors: Anne Henry, E. Sörman, Sven Andersson, W.M. Chen, Bo Monemar, Erik Janzén
Authors: T. Hornos, Adam Gali, Nguyen Tien Son, Erik Janzén
Abstract: We have investigated several aluminum-related complexes in 4H-SiC by ab initio supercell calculations. The binding energies of the defects predict high thermal stability and complex formation between aluminum and carbon interstitials in SiC. We show that the carbon vacancy can be attached to a shallow the aluminum acceptor and form a very stable defect. We also found that aluminum interstitial forms stable and metastable complexes with one or two carbon interstitials. The possible relation of these defects to the recently found aluminum- related DLTS centers is also discussed.
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