Papers by Author: Eugene Toupitsyn

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Authors: Ze Hong Zhang, Ying Gao, Arul Arjunan, Eugene Toupitsyn, Priyamvada Sadagopan, Robert M. Kennedy, Tangali S. Sudarshan
Abstract: Thick epilayers up to 60 µm have been grown on ) 0 2 11 ( face SiC substrates at a growth rate of 15 µm/hr by chemical vapor deposition (CVD). The epilayer surface is extremely smooth with a RMS roughness of 0.6 nm for a 20µm×20µm area. Threading screw and edge dislocations parallel to the c-axis are present in the ) 0 2 11 ( substrate; however, they do not propagate into the epilayer. The I-V characteristics of the Schottky diodes on this face were studied. Basal plane (0001) dislocations with a density of ~105 cm-2 were found in the ) 0 2 11 ( epilayers by molten KOH etching and electron beam induced current (EBIC) mode of the scanning electron microscope (SEM).
Authors: Mikael Syväjärvi, Rositza Yakimova, Gholam Reza Yazdi, Arul Arjunan, Eugene Toupitsyn, Tangali S. Sudarshan
Abstract: Thick layers have been grown on (1120) and (1 1 00)6H-SiC substrates. The thicknesses are up to 90 #m obtained with growth rate of 180 #m/h. Even in such thick layers the surfaces are smooth and only disturbed by polishing scratches. The surfaces contain steps which facilitate reproduction of the substrate polytype.
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