Papers by Author: Eun Dong Kim

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Authors: Geun Ho Song, Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Eun Dong Kim
661
Authors: Wook Bahng, Geun Ho Song, Nam Kyun Kim, Sang Cheol Kim, K.S. Seo, Hyoung Wook Kim, Eun Dong Kim
617
Authors: E. Belyakova, N. Shmidt, V.V. Ratnikov, Alex A. Kamanin, Eun Dong Kim, Sang Cheol Kim
667
Authors: Hyoung Wook Kim, Wook Bahng, Geun Ho Song, Sang Cheol Kim, Nam Kyun Kim, Eun Dong Kim
1241
Authors: Sang Youn Han, Nam Kyun Kim, Eun Dong Kim, Jong Lam Lee
897
Authors: Sang Cheol Kim, Wook Bahng, Nam Kyun Kim, Eun Dong Kim, T. Ayalew, T. Grasser, Siegfried Selberherr
Abstract: We report the simulation results of 25µm half cell pitch vertical type 4H-SiC DiMOSFET using the general-purpose device simulator MINIMOS-NT. The best trade-off between breakdown voltage and on-resistance in terms of BFOM is around 19MW/cm2 with a p-well spacing 5µm. The specific on -resistance, RON, sp, simulated with VGS=10V and VDS=1V at room temperature, is around 22.76mWcm2. An 900V breakdown voltage is simulated with ion-implanted edge termination.
793
Authors: T.S. Argunova, Mikhail Yu. Gutkin, L.S. Kostina, T.V. Kudriavtseva, Eun Dong Kim, Sang Cheol Kim
491
Authors: Wook Bahng, Nam Kyun Kim, Sang Cheol Kim, Geun Ho Song, Eun Dong Kim
863
Authors: Kwan Mo Kim, Soo Hyung Seo, Jae Woo Kim, Joon Suk Song, Myung Hwan Oh, Wook Bahng, Eun Dong Kim
Abstract: The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.
55
Authors: K.H. Jung, Nam Ihn Cho, J.H. Lee, Shou Jie Yang, C.K. Kim, Byung Teak Lee, Kyung Hwa Rim, Nam Kyun Kim, Eun Dong Kim
913
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