Papers by Author: Feng Yan

Paper TitlePage

Authors: Feng Yan, C. Qin, Jian Hui Zhao, M. Weiner
Authors: B.K. Ng, J.P.R. David, D.J. Massey, R.C. Tozer, G.J. Rees, Feng Yan, Jian Hui Zhao, M. Weiner
Authors: Feng Yan, C. Qin, Jian Hui Zhao, M. Bush, G.H. Olsen
Authors: Feng Yan, Yan Bin Luo, Jian Hui Zhao, Chris Dries, Gregory Olsen
Authors: Feng Yan, Xiao Bin Xin, Petre Alexandrov, Carl M Stahle, Bing Guan, Jian Hui Zhao
Abstract: A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncounting avalanche photodiodes (SPADs) in UV have been demonstrated.
Authors: J. Campi, Y. Shi, Yan Bin Luo, Feng Yan, Young Kook Lee, Jian Hui Zhao
Authors: Zhe Chuan Feng, Feng Yan, W.Y. Chang, Jian Hui Zhao, Jian Yi Lin
Authors: Yan Bin Luo, Feng Yan, Kiyoshi Tone, Jian Hui Zhao, John Crofton
Showing 1 to 9 of 9 Paper Titles