Papers by Author: Gyu Hyun Kim

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Authors: Gyu Hyun Kim, Sung Hyuk Cho, Ji Hye Han, Young Bang Lee, Chi Hyeong Roh, Kwon Hong, Sung Ki Park
Abstract: In this paper, we studied stiction behavior of HAR pattern (line and space pattern) dependence on adhesion force with surface tension of drying liquid and surface contact angle. Surface tension effect was evaluated with various drying liquids such as IPA, ethanol and HFE (hydrofluoroether) chemical. Patterns treated by dHF, APM and surface modifier were introduced to investigate dependence of pattern collapse on contact angle. The high temperature D.I. water rinse followed by high temperatures drying using liquid with low surface tension was a most effective. Furthermore, surface modification method using HMDS (hexamethyldisilazane) chemical was also effective.
Authors: Gyu Hyun Kim, Soon Young Park, Seung Seok Pyo, Ji Hye Han, Jung Nam Kim, Kee Joon Oh, Choon Kun Ryu, Yong Soo Choi, Noh Jung Kwak, Sung Ki Park
Abstract: As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane (PHPS) based spin-on dielectric (SOD) has been implemented for nanoscale devices because of self-planarization and excellent gap-filling property [1]. However, the stability of the SOD has been concerned about because it has relatively softer and more porous than conventional HDP oxide. In this paper, we report the effect of wet oxidant treatment on the stability of the SOD for STI gap-filling.
Authors: Kang Heon Lee, John Ghekiere, Joon Bum Shim, Eric J. Bergman, Gyu Hyun Kim, Bai Kil Choi, Kee Joon Oh, Geun Min Choi
Authors: Gyu Hyun Kim, Geun Min Choi, Young Wook Song
Abstract: This study deals with drying induced water marks dependency on the last cleaning methods, substrate conditions, and drying pre-step delaying times, which are supposed to become a big issue with down scaling of device geometry. The data show that water marks induced by drying failure increase with increasing contact angle on the various surfaces. They are mainly composed of either silicon oxide only or silicon oxide with organic compounds. The former is removed by a dilute HF and/or hot SC-1 treatment and the latter is removed by organic removal cleaning followed by dilute HF etching.
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