Papers by Author: Hans Jürgen von Bardeleben

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Authors: W. Sullivan, John W. Steeds, Hans Jürgen von Bardeleben, J.L. Cantin
Abstract: Several 4H SiC samples have been electron-irradiated at near threshold energies at low fluence, either along the [0001] or [000-1] direction. PL and EPR techniques have been used to investigate the dependence of the beam direction on defect generation and, together with a sample irradiated at a higher fluence, to correlate differences brought about by irradiating with a change in electron fluence. Attempts are made to correlate the information derived from the two techniques.
Authors: Didier Stiévenard, Hans Jürgen von Bardeleben, J.C. Bourgoin, A.M. Huber
Authors: Adam Gali, Peter Deák, Nguyen Tien Son, Erik Janzén, Hans Jürgen von Bardeleben, Jean-Louis Monge
Authors: Hans Jürgen von Bardeleben, Moissei K. Sheinkman, Christian Delerue, Michel Lannoo
Authors: Hans Jürgen von Bardeleben, A. Grosman, V. Morazzani, C. Ortega, J. Siejka
Authors: E. Hugonnard-Bruyère, Fabrice Letertre, Lea Di Cioccio, Hans Jürgen von Bardeleben, J.L. Cantin, Thierry Ouisse, Thierry Billon, Gérard Guillot
Authors: C. Cadet, D. Deresmes, D. Vuillaume, Didier Stiévenard, A. Grosman, C. Ortega, J. Siejka, Hans Jürgen von Bardeleben
Authors: Y.Q Jia, Hans Jürgen von Bardeleben, Didier Stiévenard, Christian Delerue
Authors: Hans Jürgen von Bardeleben, Y.Q Jia, M.O. Manasreh, K.R. Evans, C.E. Stutz
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