Papers by Author: J. Lennart Lindström

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Authors: E. Sörman, Nguyen Tien Son, W.M. Chen, Christer Hallin, J. Lennart Lindström, Erik Janzén
Authors: J. Lennart Lindström, Bengt Gunnar Svensson, W.M. Chen
Authors: Anne Henry, Bo Monemar, Peder Bergman, J. Lennart Lindström, Y. Zhang, James W. Corbett
Authors: T. Hallberg, J. Lennart Lindström, Bengt Gunnar Svensson, Krzysztof Swiatek
Authors: Bengt Gunnar Svensson, J. Lennart Lindström
Authors: T. Egilsson, Anne Henry, Ivan G. Ivanov, J. Lennart Lindström, Erik Janzén
Authors: Valentin V. Litvinov, Bengt Gunnar Svensson, L.I. Murin, J. Lennart Lindström, Vladimir P. Markevich
Abstract: Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.
Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt Gunnar Svensson
Authors: L.I. Murin, Bengt Gunnar Svensson, J. Lennart Lindström, Vladimir P. Markevich, Charalamos A. Londos
Abstract: Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.
Authors: Vladimir P. Markevich, L.I. Murin, Stanislav B. Lastovskii, I.F. Medvedeva, J. Lennart Lindström, Anthony R. Peaker, J. Coutinho, R. Jones, Vitor J.B. Torres, Sven Öberg, Patrick R. Briddon
Abstract: The electronic properties and structure of a complex incorporating a self-interstitial (I) and two oxygen atoms are presented by a combination of deep level transient spectroscopy (DLTS), infrared absorption spectroscopy and ab-initio modeling studies. It is argued that the IO2 complex in Si can exist in four charge states (IO− 2 , IO02 , IO+ 2 , and IO++ 2 ). The first and the second donor levels of the IO2 complex show an inverted location order in the gap, leading to a E(0/ + +) occupancy level at Ev + 0.255 eV. Activation energies for hole emission, transformation barriers between different structures, and positions of LVM lines for different configurations and charge states have been determined. These observables were calculated by density-functional calculations, which show that they are accounted for if we consider at least two charge-dependent defect structures.
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