Papers by Author: Jean Camassel

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Authors: Jean-Louis Robert, Sylvie Contreras, Jean Camassel, Julien Pernot, Sandrine Juillaguet, Lea Di Cioccio, Thierry Billon
Authors: Teddy Robert, Maya Marinova, Sandrine Juillaguet, Anne Henry, Efstathios K. Polychroniadis, Jean Camassel
Abstract: A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.
Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel
Abstract: The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural properties by high resolution transmission electron microscopy, we focus on the electronic structure. We show that one unit cell of 8H does not behave like a single type-II quantum well but, rather, like two type-II quantum wells of 3C coupled by a thin hexagonal barrier. Using a transfer matrix method, we compute the corresponding transition energies, taking into account the effect of the valence band offset and built-in electric field. A good agreement is found with the experimental data collected from low temperature photoluminescence spectroscopy.
Authors: Marcin Zielinski, Marc Portail, Thierry Chassagne, Sandrine Juillaguet, Hervé Peyre, André Leycuras, Jean Camassel
Abstract: We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented “crucibles”, the elaboration of crack-free (111) “crucibles” and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100µm thick 3C-SiC(100) as well as 30µm thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100µm/h and locally can even reach ~1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.
Authors: Antoine Tiberj, Marta Martin, Nicolas Camara, P. Poncharal, T. Michel, J.L. Sauvajol, Phillippe Godignon, Jean Camassel
Abstract: We report an investigation of few layers graphene exfoliated on SiC. Using AFM and Raman spectroscopy, we find that the graphene thickness determined from the normalized intensity of Raman lines significantly depart from the one obtained using XPS.
Authors: Jean Marie Bluet, Julien Pernot, Thierry Billon, Sylvie Contreras, J.F. Michaud, Jean-Louis Robert, Jean Camassel
Authors: C. Sartel, Véronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth
Abstract: We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in place of the usual Silane/TriMethylAluminium/Propane (S/TMA/P) precursors. The influence of growth parameters such as TMA flow, growth rate or C/Si ratio is investigated. The aluminium incorporation level is deduced from both by C(V) (mercury probe) and SIMS measurements. The presence of aluminium in the layers is confirmed by non-destructive optical micro-Raman experiments. Good quality p-type, aluminium doped 4H-SiC layers can be grown using HMDS/TMA/P system. The amount of aluminium in the layers can be controlled by choosing the growth conditions and an aluminium concentration as high as 2x1019 has been reached.Finally, comparing the two HMDS/TMA/P and S/TMA/P systems, no difference in aluminium incorporation has been found.
Authors: Patrice Vicente, Etienne Pernot, Didier Chaussende, Jean Camassel
Authors: N. Planes, P. Dupel, M. Ravetz, Sylvie Contreras, Patrice Vicente, Thierry Chassagne, B. Fraisse, Jean Camassel, Yves Monteil, S. Rushworth
Authors: Laurence Latu-Romain, Didier Chaussende, Carole Balloud, Sandrine Juillaguet, L. Rapenne, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
Abstract: Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal <0001> seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could grow thick 3C-SiC single crystal almost free of DPB [1]. In this work we present the results of a multi-scale investigation of such crystals. Using birefringence microscopy, EBSD and HR-TEM, we find evidence of a continuous improvement of the crystal quality with increasing thickness in the most defected area, at the sample periphery. On the contrary, in the large DPB-free area, the SF density remains rather constant from the interface to the surface. The LTPL spectra collected at 5K on the upper part of samples present a nice resolution of multiple bound exciton features (up to m=5) which clearly shows the high (electronic) quality of our 3C-SiC material.
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