Papers by Author: Jie Yang

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Authors: Peng He, Chong Wang, Jie Yang, Yu Yang
Abstract: The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.
Authors: Wen Yuan Zhang, Rui Xiang Liu, Jie Yang, Chang Ling Zhou, Xue Ye Sui, Chong Hai Wang
Abstract: In this paper we take advantage of the phosphate film which has a porous structure, by phosphate process on the surface of nickel plated copper conductor so as to improve the bonding force of wire and ceramic layer; Through the study of resistance voltage breakdown after phosphate , phosphate liquid was determined Manganese dihydrogen phosphate for 3g100-1ml, Zinc Nitrate was 8g100-1ml, Sodium Fluoride was 0.45g100-1ml; Optimum temperature was 60°C and the appropriate time was 15min at the temperature of 60°C.
Authors: Xi Zhou, Chong Wang, Jie Yang, Ying Xia Jin, Yu Yang
Abstract: A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.
Authors: Pu Lin Nie, Yao Shen, Jie Yang, Qiu Long Chen, Xun Cai
Abstract: Cross-sectional nanoindentation (CSN) is a new method for measuring interface adhesion of thin films. The interfacial energy release rate (G), characterizing interfacial adhesion, is calculated from the material and geometrical parameters relevant to the test. Effects of residual stresses on G and crack tip phase angle Ψ, have been studied by finite element simulation in this study. The results show tensile residual stresses increase G and compressive stresses reduce it, and they have similar effects on the magnitude of Ψ.
Authors: Peng Fei Ji, Chong Wang, Jie Yang, Zhang Sheng Shi, Yu Yang
Abstract: Today, silicon material plays an irreplaceable role in microelectronic of the information industry, however it don`t have a good emission characteristics. In order to explore the emission character, we calculated the electrons structure, absorbance of silicon doped with C, Si, Ge, Sn and Pb by the first-principles methods.
Authors: Jin Tao Yao, Chong Wang, Jie Yang, Yu Yang
Abstract: The development history of resonant tunneling diodes (RTD), the principle of quantum dot resonant tunneling diodes (QDRTD), and their characteristics of exceptional negative differential resistance (NDR) of QDRTD, are briefly introduced in this paper. The typical type and the design processes of QDRTD, and recent research progress are summarized in detail. Finally, the facing problems and the future necessary development directions of QDRTD are discussed.
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