Papers by Author: Jin Goo Park

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Authors: Ja Hyung Han, Ja Eung Koo, Kyo Se Choi, Byung Lyul Park, Ju Hyuk Chung, Sang Rok Hah, Sun Yong Lee, Young Jae Kang, Jin Goo Park
Abstract: The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during Cu/low-k CMP is suggested and its prevention methods are proposed in this study. A suitable surfactant treatment can improve the wettability of low-k films and reduce the watermark defects very effectively. The relatively stable low-k film surface is activated during polishing and prone to adsorb surfactant molecules during cleaning, which results in the reduction of water-marks after CMP. Another solution to eliminate water-mark is the application of IPA dryer in post CMP cleaning.
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Authors: Yang Lae Lee, Eui Su Lim, Kook Jin Kang, Hyun Se Kim, Tae Gon Kim, Sang Ho Lee, Jin Goo Park
Abstract: T type megasonic waveguide was analyzed by finite element method (FEM), acoustic pressure measurements and particle removal efficiency for the single wafer cleaning application. Compared to conventional longitudinal waves, a transverse waves were generated in a T type waveguide. Not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.
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Authors: Yi Koan Hong, Ja Hyung Han, Jin Hyung Lee, Jin Goo Park, Ahmed A. Busnaina
Abstract: The adhesion force and removal of alumina particles on Cu, Ta, TEOS, SILKTM, Aurora and FSG wafer surfaces were experimentally and theoretically investigated in slurry solutions of different pHs. These wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. However, the zeta potentials of FSG surface drastically decreased with increasing pH. The lowest adhesion force and smallest number of alumina particles were measured between alumina particle and FSG surface in a slurry solution of pH 11. Alkaline slurry was much more desirable in controlling the level of particle contamination during Cu CMP. The pH of the slurry and zeta potentials of the surfaces played important roles in controlling the interaction force.
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Authors: Yi Koan Hong, Young Jae Kang, Jin Goo Park, Sang Yeob Han, Seong Kyu Yun, Bo Un Yoon, Chang Ki Hong
Abstract: The purpose of this study is to investigate the effects of slurry pH on the adhesion and removal of silica and ceria abrasive particles on the poly Si, TEOS, SiN and SAC (self aligned memory cell contact) and STI (shallow trench isolation) patterned wafer surfaces. The adhesion force of silica and ceria particles were theoretically and experimentally investigated in STI and poly Si CMP process. A stronger adhesion force was observed for silica particles on the poly Si wafer in acidic rather than in alkaline solutions. The adhesion force of ceria particle was lower than that of silica in investigated pH ranges. STI patterned wafer showed lower adhesion force than SAC patterned wafer. Lower adhesion force between particles and surface resulted in a lower level of particle contamination.
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Authors: Kurt Wostyn, Tae Gon Kim, Paul W. Mertens, Jin Goo Park
Abstract: When a physical cleaning technology, such as megasonic and high-velocity-liquid aerosol cleaning, is considered for the removal of particles or photo resist residues, damage addition is a major concern. After detection of defects in long gate stack lines by bright field inspection (KT2800), SEM imaging shows they extend over a length in the order of 1μm (Figure 1) [1].
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Authors: Bong Ho Kim, Jin Goo Park
Abstract: Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N2 gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.
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Authors: Seung Ho Lee, Tae Gon Kim, Tae Young Kwon, Jin Goo Park, So Ik Bae, Gun Ho Lee, In Jung Kim
Abstract: Ozonated DI water was supplied to make alkaline cleaning solutions to replace SC1 chemicals in a bath with and without recirculation. With recirculation, low dissolved ozone and low pH cause lower particle removal efficiency (PRE) of 75%. However, direct supply of ozonated water with NH4OH to a bath without recirculation resulted in higher PRE over 93 %.
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Authors: Tae Gon Kim, Antoine Pacco, Kurt Wostyn, Steven Brems, Xiu Mei Xu, Herbert Struyf, Kai Arstila, B. Vandevelde, Jin Goo Park, Stefan De Gendt, Paul W. Mertens, Marc M. Heyns
Abstract: Four different types of FINs; amorphous Si (a-Si), annealed a-Si, polycrystalline Si (poly-Si) and crystalline Si (c-Si) were used to investigate the effect of interfacial strength and the length of structures on the physical cleaning window by measuring their collapse forces by atomic force microscope (AFM). A transmission electron microscope (TEM) and a nanoneedle with a nanomanipulator in a scanning electron microscope (SEM) were employed in order to explain the different collapse behavior and their forces. Different fracture shapes and collapse forces of FINs could explain the influence of the interfacial strength on the pattern strength. Furthermore, the different lengths of a-Si FINs were prepared and their collapse forces were measured and the shorter length reduced their pattern strength. Strong adhesion at the interface resulted in a wider process window while smaller dimensions made the process window narrower.
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