Papers by Author: Jin Min Li

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Authors: Yong Mei Zhao, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li, Yi Ping Zeng
Abstract: Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.
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Authors: Guo Sheng Sun, Jin Ning, Quan Cheng Gong, Xin Gao, Lei Wang, Xing Fang Liu, Yi Ping Zeng, Jin Min Li
Abstract: Horizontal air-cooled low-pressure hot-wall CVD (LP-HWCVD) system is developed to get high quality 4H-SiC epilayers. Homoepitaxial growth of 4H-SiC on off-oriented Si-face (0001) 4H-SiC substrates purchased from Cree is performed at a typical temperature of 1500°C with a pressure of 40 Torr by using SiH4+C2H4+H2 gas system. The surface morphologies and structural and optical properties of 4H-SiC epilayers are characterized with Nomarski optical microscope, atomic force microscopy (AFM), x-ray diffraction, Raman scattering, and low temperature photoluminescence (LTPL). The background doping of 32 μm-thick sample has been reduced to 2-5×1015 cm-3. The FWHM of the rocking curve is 9-16 arcsec. Intentional N-doped and B-doped 4H-SiC epilayers are obtained by in-situ doping of NH3 and B2H6, respectively. Schottky barrier diodes with reverse blocking voltage of over 1000 V are achieved preliminarily.
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Authors: Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li
Abstract: Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.
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Authors: Guo Sheng Sun, M.C. Luo, Lei Wang, S.R. Zhu, Jin Min Li, Yi Ping Zeng, L.Y. Lin
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Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng
Abstract: Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.
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