Papers by Author: Joachim Grillenberger

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Authors: G. Pasold, F. Albrecht, Joachim Grillenberger, Ulrike Grossner, C. Hülsen, R. Sielemann, W. Witthuhn
Authors: Doris Forkel-Wirth, N. Achtziger, A. Burchard, J.C. Correia, Manfred Deicher, Joachim Grillenberger, H. Gottschalck, T. Licht, R. Magerle, U. Reislöhner, M. Rüb, M. Toulemonde, W. Witthuhn
Authors: G. Pasold, N. Achtziger, Joachim Grillenberger, W. Witthuhn
Authors: Marc Avice, Ulrike Grossner, Edouard V. Monakhov, Joachim Grillenberger, Ola Nilsen, Helmer Fjellvåg, Bengt Gunnar Svensson
Abstract: In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.
Authors: Ulrike Grossner, Joachim Grillenberger, F. Albrecht, G. Pasold, R. Sielemann, Bengt Gunnar Svensson, W. Witthuhn
Authors: Bengt Gunnar Svensson, Anders Hallén, J. Wong-Leung, Martin S. Janson, Margareta K. Linnarsson, Andrej Yu. Kuznetsov, Giovanni Alfieri, Ulrike Grossner, Edouard V. Monakhov, H. K.-Nielsen, C. Jagadish, Joachim Grillenberger
Abstract: A brief survey is given of some recent progress regarding ion implantation processing and related effects in 4H- and 6H-SiC. Four topics are discussed; an empirical ion range distribution simulator, dynamic defect annealing during implantation, formation of highly p+-doped layers, and deactivation of N donors by ion-induced defects.
Authors: N. Achtziger, Joachim Grillenberger, M. Uhrmacher, W. Witthuhn
Authors: Joachim Grillenberger, N. Achtziger, G. Pasold, W. Witthuhn
Authors: N. Achtziger, Joachim Grillenberger, W. Witthuhn
Authors: F. Albrecht, G. Pasold, Joachim Grillenberger, U. Reislöhner, Marc Dietrich, W. Witthuhn, Isolde Collaboration
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