Papers by Author: Keiji Wada

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Authors: Hitoshi Ohsato, Keiji Wada, Tomohisa Kato, C.J. Sun, M. Razeghi
1489
Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
Abstract: 4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.
219
Authors: S. Sakai, H. Sato, T. Sugahara, Y. Naoi, S. Kurai, Kenya Yamashita, S. Tottori, M. Hao, Keiji Wada, Shigehiro Nishino
1107
Authors: Hiroshi Fushimi, Keiji Wada
957
Authors: Keiji Wada, Tsunenobu Kimoto, Kimito Nishikawa, Hiroyuki Matsunami
Abstract: 4H-SiC layers have been homoepitaxially grown on off-axis 4H-SiC(000-1) under various conditions by horizontal hot-wall CVD. Improvement of surface morphology and reduction of background doping concentration have been achieved. Surface morphology grown on the (000-1) C face strongly depends on the C/Si ratio at 1500 °C, and hillock-like surface defects can be eliminate by increasing growth temperature to 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions even on the (000-1) C face. The lowest doping concentration has been determined to be 6.0x1014 cm-3. A trial of high-speed growth on the (000-1) C face and deep level analysis are also discussed.
85
Authors: Keiji Wada, Hachiro Nakanishi
1051
Authors: H. Iijima, T. Asonuma, T. Hirose, M. Irako, K. Kadoya, M. Kajita, T. Kumita, B. Matsumoto, N.N. Mondal, Keiji Wada
670
Authors: Keiji Wada, Hachiro Nakanishi, Lionel C. Kimerling
1401
Authors: S. Heun, M. Sugiyama, S. Maeyama, Yu Watanabe, Keiji Wada, M. Oshima
129
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