Papers by Author: Konstantin Vassilevski

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Authors: Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson
Abstract: 4H-SiC diodes with 0.60 mm2 nickel silicide Schottky contacts were fabricated on commercial epitaxial layers. At room temperature, the diodes have specific on-resistances (RON-SP) down to 10.5 mΩcm2 and blocking voltages (VBL) up to 4.6 kV, which is equal to 93 % of the calculated parallel plane breakdown voltage for used epitaxial structure. The corresponding figure-of-merit, defined as (VBL)2/RON-SP, is equal to 2015 MW/cm2 and is among the highest FOM values reported to date. The diodes demonstrated stable operation at forward current of 1 A and VBL value in excess of 3.3 kV at ambient temperatures up to 200 °C.
Authors: Konstantin Vassilevski, A.V. Zorenko, Konstantinos Zekentes, Katerina Tsagaraki, Edwige Bano, C. Banc, Alexander A. Lebedev
Authors: Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill
Authors: Nicolas G. Wright, Konstantin Vassilevski, Irina P. Nikitina, Alton B. Horsfall, C. Mark Johnson, Praneet Bhatnagar, Peter Tappin
Abstract: New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect is proportional to anneal temperature and occurs predominantly in the implanted zone. Signs of lattice strain are observed outside the implanted zone as well.
Authors: Daniel Brennan, Bing Miao, Konstantin Vassilevski, Nicolas G. Wright, Alton B. Horsfall
Abstract: This work presents the amplitude modulation radio transmission system for communications in hostile environments. The commissioning of a high temperature oscillator and AM mixer system for the purpose of Amplitude Shift Keyed modulation is presented. While previous work has demonstrated oscillators in the Ultra High Frequency (UHF) band, these have been targeted at applications such as radar and mobile telephones. In this paper we have concentrated on the shortwave bands to maximize the range between a sensor unit and the receiver within wireless networks. The work demonstrates that simple communication systems are already possible for hostile environments and allow for simple sensor data to be wirelessly transmitted to safer working areas.
Authors: Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill
Abstract: Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6+m to 2.2+m are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.
Authors: Nicolas G. Wright, C. Mark Johnson, Alton B. Horsfall, Cyril Buttay, Konstantin Vassilevski, W.S. Loh, R. Skuriat, P. Agyakwa
Abstract: The adoption of SiC devices as a viable technology depends crucially on maximising the potential advantages of the material. This is best achieved by the adoption of co-design techniques in which the optimisation of the SiC device is performed in parallel to that of the package and the overall application. This paper considers suitable techniques for this co-design and describes new approaches to the development of SiC technology for practical applications.
Authors: Nicolas G. Wright, N. Poolamai, Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson
Authors: C. Blasciuc-Dimitriu, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Nicolas G. Wright, Anthony G. O'Neill
Authors: Konstantin Vassilevski, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
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