Papers by Author: Lyudmila I. Khirunenko

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Authors: Lyudmila I. Khirunenko, Yurii V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii
Abstract: In silicon with high oxygen and boron content a new absorption band situated near 1026 cm-1 was found in Si after light illuminSuperscript textation with intensity of 70 mW/cm2. It was shown that both oxygen and boron are the component of the defect to which found band corresponds. It was revealed that defect occurs also during thermal treatments of silicon without illumination when a weak current was applied to the sample upon the treatment. The assumption was made that the formation of defect occurs both as result of direct interaction of components and through intermediate metastable states.
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Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.V. Shumov
1767
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov
183
Authors: Lyudmila I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov
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Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.K. Shinkarenko, V.I. Yashnik
293
Authors: Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.I. Yashnik
1385
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, N.A. Tripachko, Mikhail G. Sosnin, A.V. Duvanskii, L.I. Murin, J. Lennart Lindström, Stanislav B. Lastovskii, L.F. Makarenko, Vladimir P. Markevich, Anthony R. Peaker
Abstract: The evolution of radiation-induced carbon-related defects in low temperature irradiated oxygen containing silicon has been studied by means of Fourier transform infrared absorption spectroscopy (FTIR) and deep level transient spectroscopy (DLTS). FTIR measurements have shown that annealing of interstitial carbon atom Ci, occurring in the temperature interval 260-300 K, results in a gradual appearance of a number of new absorption bands along with the well known bands related to the CiOi complex. The new bands are positioned at 812, 910.2, 942.6, 967.4 and 1086 cm-1. It has been found that the pair of bands at 910 and 942 cm-1 as well as another set of the bands at 812, 967.4 and 1086 cm-1 display identical behavior upon isochronal annealing, i.e. the bands in both groups appear and disappear simultaneously. The disappearance of the first group occurs at T = 285-300 K while the second group anneals out at T = 310-340 K. These processes are accompanied by an increase in intensity of the bands related to CiOi. It is suggested that intermediate states (precursors) are formed upon the transformation from a single (isolated) Ci atom to a stable CiOi defect. The results obtained in DLTS studies are in agreement with the FTIR data and show unambiguously the formation of CiOi precursors with slightly lower activation energy for the hole emission as compare to that for the main CiOi state.
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Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin, A.V. Duvanskii, Vitor J.B. Torres, J. Coutinho, R. Jones, Patrick R. Briddon, Nikolay V. Abrosimov, H. Riemann
Abstract: The interstitial carbon impurity (CI) vibrational modes in monocrystalline Si-rich SiGe were investigated by Fourier Transform Infra Red spectroscopy and density functional modelling. The two absorption bands of CI are found to be close to those in silicon, but show shifts in opposite directions with increasing Ge content. The transversal mode band at 932 cm-1 shifts slightly to the high frequency side, while the longitudinal mode at 922 cm-1 suffers a pronounced red-shift. Each Ci-related band is found to consist of two components. An annealing of CI in Si1-xGex occures in two stage. During the first stage (210-250 K) the main components of bands anneals and revealed components grow in intensity. At T>250 K all components disappear. Two component structure of bands is suppose most likely correspond to different combinations of Si and Ge atoms in the neighbourhood of the carbon atom. The interstitial carbon defect was modelled by a supercell density-functional pseudopotential method (AIMPRO) for alloys with 4.69% Ge concentration. From energetics, it has been found that each Ge-C bond costs at least 0.4 eV in excess of a Si-C bond. However, structures where Ge atoms are second neighbors to the C atom are marginally bound, and may explain the two-component band structure in the absorption measurements. The vibrational mode frequencies taken from several randomly generated SiGe cells produce the observed opposite shifts for the transverse and longitudinal modes.
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Authors: F.M. Vorobkalo, Lyudmila I. Khirunenko, V.I. Shakhovtsov, V.K. Shinkarenko
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Authors: Lyudmila I. Khirunenko, O.A. Kobzar, Yu.V. Pomozov, Mikhail G. Sosnin, N.A. Tripachko, Nikolay V. Abrosimov, H. Riemann
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