Papers by Author: M.C. Luo

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Authors: Xing Fang Liu, Guo Sheng Sun, Yong Mei Zhao, Jin Ning, J.Y. Li, Lei Wang, Wan Shun Zhao, M.C. Luo, Jin Min Li
Abstract: Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n- multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n- multi-epilayers showed low dark current and high detectivity in the UV range.
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Authors: Guo Sheng Sun, M.C. Luo, Lei Wang, S.R. Zhu, Jin Min Li, Yi Ping Zeng, L.Y. Lin
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Authors: Xing Fang Liu, Guo Sheng Sun, Jin Min Li, Yong Mei Zhao, J.Y. Li, L. Wang, Wan Shun Zhao, M.C. Luo, Yi Ping Zeng
Abstract: Three types of defects, namely defect I, defect II, defect III, in the 4H-SiC homoepilayer were investigated by micro-raman scattering measurement. These defects all originate from a certain core and are composed of (I) a wavy tail region, (II) two long tails, the so called comet and (III) three plaits. It was found that there are 3C-SiC inclusions in the cores of defect II and defect III and the shape of inclusion determines the type of defect II or defect III. If the core contains a triangle-shaped inclusion, the defect III would be formed; otherwise, the defect II was formed. No inclusion was observed in the core of the defect I. The mechanisms of these defects are discussed.
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