Papers by Author: Manfred Reiche

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Authors: K. Gutjahr, Manfred Reiche, U.M. Gösele
Authors: H. Reimer, W. Nitzsche, Manfred Reiche
Authors: K. Holldack, H. Kerkow, Manfred Reiche
Authors: Teimuraz Mchedlidze, Oleg Kononchuk, Tzanimir Arguirov, Maxim Trushin, Manfred Reiche, Martin Kittler
Abstract: The investigation of regular dislocation networks (DN) formed by direct wafer bonding suggests that the D1 and D2 peaks of dislocation-related luminescence (DRL) in silicon is linked to screw dislocations, whereas edge dislocations are responsible for D3 and D4 DRL peaks. Non-radiative recombination activity in DN could be attributed to edge dislocations and could be related to enhanced ability of these dislocations to getter impurity atoms. Obtained relation of DRL intensity with the density of screw dislocations suggests existence of the optimum twist angle for the wafer-bonding geometry for which the DRL intensity has a maximum. The dependence of DRL intensity on the spacing between screw dislocations has the maximum at about 7 nm. Reported radiative and non-radiative recombination properties of DN present substantial interest not only for possible LED applications in all-Si photonics but also for photovoltaics, since DNs represent a model system for grain boundaries controlling carrier lifetime in microcrystalline-Si material.
Authors: Manfred Reiche
Abstract: The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible
Authors: Martin Kittler, Manfred Reiche, Tzanimir Arguirov, Teimuraz Mchedlidze, Winfried Seifert, O.F. Vyvenko, T. Wilhelm, X. Yu
Authors: Manfred Reiche, Martin Kittler, Eckhard Pippel, Hans Kosina, Alois Lugstein, Hartmut Uebensee
Abstract: Dislocations are one-dimensional crystal defects. Their dimension characterize the defects as nanostructures (nanowires). Measurements on defined dislocation arrays proved numerous exceptional electronic properties. A model of dislocations as quantum wires is proposed. The formation of the quantum wire is a consequence of the high strain level on the dislocation core modi-fying locally the band structure.
Authors: U.M. Gösele, H. Stenzel, Manfred Reiche, T. Martini, H. Steinkirchner, Q.-Y. Tong
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