Papers by Author: Marcin Zielinski

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Authors: C. Sartel, Véronique Soulière, Marcin Zielinski, Yves Monteil, Jean Camassel, S. Rushworth
Abstract: We report on the study of the p-type doping of 4H-SiC material using HexaMethylDiSilane/TriMethylAluminium/Propane (HMDS/TMA/P) system in place of the usual Silane/TriMethylAluminium/Propane (S/TMA/P) precursors. The influence of growth parameters such as TMA flow, growth rate or C/Si ratio is investigated. The aluminium incorporation level is deduced from both by C(V) (mercury probe) and SIMS measurements. The presence of aluminium in the layers is confirmed by non-destructive optical micro-Raman experiments. Good quality p-type, aluminium doped 4H-SiC layers can be grown using HMDS/TMA/P system. The amount of aluminium in the layers can be controlled by choosing the growth conditions and an aluminium concentration as high as 2x1019 has been reached.Finally, comparing the two HMDS/TMA/P and S/TMA/P systems, no difference in aluminium incorporation has been found.
Authors: Didier Chaussende, Carole Balloud, Laurent Auvray, Francis Baillet, Marcin Zielinski, Sandrine Juillaguet, Michel Mermoux, Etienne Pernot, Jean Camassel, Michel Pons, Roland Madar
Authors: Marc Portail, Adrien Michon, Stephane Vézian, Denis Lefebvre, Sébastien Chenot, Abdelkarim Ouerghi, Marcin Zielinski, Thierry Chassagne, Yvon Cordier
Abstract: Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.
Authors: Sandrine Juillaguet, Marcin Zielinski, Carole Balloud, C. Sartel, C. Consejo, Bernard Boyer, Véronique Soulière, Jean Camassel, Yves Monteil
Authors: Phillippe Godignon, Christophe Jacquier, Servane Blanqué, Josep Montserrat, Gabriel Ferro, Sylvie Contreras, Marcin Zielinski, Yves Monteil
Authors: Caroline Blanc, Marcin Zielinski, Véronique Soulière, C. Sartel, Sandrine Juillaguet, Sylvie Contreras, Jean Camassel, Yves Monteil
Abstract: We report an experimental investigation of the residual (n-type) and intentional (p-type) doping level of <11-20> epitaxial layers grown on a-cut 4H-SiC substrates. Using SIMS, C(V) measurements, low temperature photoluminescence and Hall effect investigations, we show that nitrogen incorporates 3 times more than usually found for <0001> surfaces. Conversely, aluminum incorporates 8 times less. Altogether, this is in excellent agreement with previous results from stepcontrolled epitaxy.
Authors: Marcin Zielinski, Carole Balloud, Sandrine Juillaguet, Bernard Boyer, Véronique Soulière, Jean Camassel
Abstract: Recently, a systematic comparison of SIMS measurements with LTPL (Low Temperature Photoluminescence) spectra led us to propose a straightforward empirical calibration of the LTPL intensity versus Al content in 4H-SiC samples. In the present work we analyze the effect of the LTPL excitation power on the intensity of the Al-related features. We examine the influence of the excitation conditions on the calibration curve and determine the limitations of the method.
Authors: Christophe Jacquier, Gabriel Ferro, Carole Balloud, Marcin Zielinski, Jean Camassel, Efstathios K. Polychroniadis, J. Stoemenos, François Cauwet, Yves Monteil
Authors: Christophe Jacquier, Gabriel Ferro, Marcin Zielinski, Efstathios K. Polychroniadis, A. Andreadou, Jean Camassel, Yves Monteil
Abstract: The so-called VLS (Vapour-Liquid-Solid) mechanism in an Al-Si melt has recently demonstrated the capability to grow at low temperature single crystalline 4H-SiC layers, with a high Al content. Using the newly developed VLS technique, we have deposited several 4H-SiC layers and determined the incorporated Al level by SIMS (Secondary Ion Mass Spectroscopy). Depending on the sample, we have found that the SIMS doping level ranges from 5x1019 to 1x1021 This last value is the highest one reported so far for in-situ doped SiC:Al. From TEM (Transmission Electron Microscopy) analyses we show that the layers are single crystals, with a high density of defects located only at the lower interface and no foreign phase inclusion. These results compare well with the ones obtained in previous works using alternative doping techniques, like ion implantation, chemical vapour deposition or sublimation. It thus suggests that Al solubility limit in SiC is rather temperature independent.
Authors: Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier
Abstract: In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.
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