Papers by Author: Margareta K. Linnarsson

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Authors: Margareta K. Linnarsson, J. Isberg, Adolf Schöner, Anders Hallén
Abstract: The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.
Authors: Margareta K. Linnarsson, Sethu Saveda Suvanam, Lasse Vines, Anders Hallén
Abstract: Relocation of alkali metals sodium, potassium and cesium during oxidation of 4H-SiC has been studied by secondary ion mass spectrometry. The alkali metal source has been introduced by ion implantation before oxidation into n-and p-type 4H-SiC samples. Dry oxidation of SiC has been performed at 1150 oC during 4, 8 and 16 h. In the formed oxide, the main part of the alkali metals diffuses out via the SiO2 surface. Close to the moving SiO2/SiC interface, a minor amount of alkali metals is retained. In the SiC material, the main amount of implanted alkali atoms is not redistributed during the oxidation, although a minor amount diffuses deeper into the samples. For p-type 4H-SiC, the diffusion deeper into the samples of the studied alkali metals decreases as the mass increases, Na+<K+<Cs+, but the sodium mobility is substantial already at 1150 °C.
Authors: Urban Forsberg, Örjan Danielsson, Anne Henry, Margareta K. Linnarsson, Erik Janzén
Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Andrey O. Konstantinov, Bengt Gunnar Svensson
Authors: Giovanni Alfieri, Edouard V. Monakhov, Margareta K. Linnarsson, Bengt Gunnar Svensson
Abstract: Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.
Authors: John Österman, Srinivasan Anand, Margareta K. Linnarsson, Anders Hallén
Authors: Martin S. Janson, Anders Hallén, Phillippe Godignon, Andrej Yu. Kuznetsov, Margareta K. Linnarsson, Erwan Morvan, Bengt Gunnar Svensson
Authors: L. Storasta, Björn Magnusson, Anne Henry, Margareta K. Linnarsson, Peder Bergman, Erik Janzén
Authors: Erwan Morvan, Narcis Mestres, F.J. Campos, Jordi Pascual, Anders Hallén, Margareta K. Linnarsson, Andrej Yu. Kuznetsov
Authors: Margareta K. Linnarsson, Martin S. Janson, Adolf Schöner, Nils Nordell, S. Karlsson, Bengt Gunnar Svensson
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