Papers by Author: Marie France Beaufort

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Authors: S. Peripolli, Marie France Beaufort, David Babonneau, Sophie Rousselet, P.F.P. Fichtner, L. Amaral, Erwan Oliviero, Jean François Barbot, S.E. Donnelly
Abstract: In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.
Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, Alain Declémy, C. Blanchard, Marie France Beaufort, A. van Veen
Authors: Jean François Barbot, Erwan Oliviero, Marie-Laure David, Sophie Rousselet, Marie France Beaufort, A. van Veen
Authors: Marie-Laure David, Frédéric Pailloux, Michèl Drouet, Marie France Beaufort, Jean François Barbot, Eddy Simoen, Cor Claeys
Abstract: (001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite of a higher surface roughness observed after the PBII process.
Authors: Alain Declémy, A.A. Shiryaev, S. Stepanov, Jean François Barbot, Marie France Beaufort, Erwan Oliviero, E. Ntsoenzok, Thierry Sauvage
Authors: Marie-Laure David, Erwan Oliviero, A. Ratchenkova, Nikolai N. Gerasimenko, Alain Declémy, Jean François Barbot, A. van Veen, Marie France Beaufort
Authors: Marie-Laure David, Marie France Beaufort, Jean François Barbot
Authors: Reinhart Job, Yue Ma, Yue Long Huang, Alexander G. Ulyashin, Wolfgang R. Fahrner, Marie France Beaufort, Jean François Barbot
Authors: Jean François Barbot, Marie France Beaufort, Valerie Audurier
Abstract: The evolution of mechanical properties of helium-implanted 4H-SiC at room temperature has been mainly studied by nanoindentation tests. The curves of hardness and elastic modulus present a maximum at low levels of damage while a degradation of the mechanical properties is observed for high levels of damage. However, when the concentration of implanted ions exceeds 0.5 %, complex defects (helium-vacancy defects) become predominant which results in the increase of both the hardness and the modulus. Under high fluence of helium implantation tiny bubbles form and the amorphous transition is observed above a critical level of damage.
Authors: Stephanie Leclerc, Marie France Beaufort, Valerie Audurier, Alain Déclemy, Jean François Barbot
Abstract: Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.
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