Papers by Author: Markus Koch

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Authors: Gernot Gruber, Markus Koch, Gregor Pobegen, Michael Nelhiebel, Peter Hadley
Abstract: Only a few methods exist to observe, identify, and localize defects in SiC devices. These defects are a major limit for device performance and reliability. Presented is an improved experimental setup to investigate deep level defects using electrically detected magnetic resonance (EDMR). The method applied in this study exploits the simultaneous in-situ electron spin resonance (ESR) measurement of a standard sample (DPPH) to calibrate the magnetic field. The functionality is shown by comparing the data of an ion implanted SiC diode to results from a recent study . The in-situ B-field calibration is found to increase the accuracy of EDMR measurements by a factor of 2.5.
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Authors: Gernot Gruber, Thomas Aichinger, Gregor Pobegen, Dethard Peters, Markus Koch, Peter Hadley
Abstract: Anneals in nitrogen (N) containing atmosphere have been proven as efficient means of improving the channel mobility of SiC MOSFETs. It has been demonstrated that simultaneously the density of interface traps is reduced. However, this process is not yet fully understood. In this study we show a comparison of MOSFETs annealed in different atmospheres and compare their electrically detected magnetic resonance (EDMR) spectra with electrical parameters. We find hints for the N incorporation not only passivating but also creating or transforming defects.
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