Papers by Author: Masanobu Yoshikawa

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Authors: Masanobu Yoshikawa
Abstract: The Raman spectra of boron-doped single-crystalline diamond were measured at excitation wavelengths between 364.0 and 1064.0 nm and found that the first-order Raman band at 1332 cm-1 shifts to the low-frequency side, broadens, and develops a derivative-like lineshape as the boron concentration increases. The derivative-like lineshape can be explained by Fano interference. Furthermore, I found that the asymmetric lineshape changes between excitation wavelengths of 514.5 and 785.0 nm. From a comparison of the normalized relative Raman intensity as a function of the excitation energy and the density of states (DOS) in the valence band in the B-doped diamond calculated previously by the coherent potential approximation, the abnormal change in the Raman lineshape is attributed to a change in the DOS in the valence band at approximately 2.0 eV. Raman spectroscopy provides us with extensive information on carrier concentrations, and electronic band structures of B-doped diamond.
1158
Authors: Masanobu Yoshikawa, Hirohumi Seki, Keiko Inoue, Takuma Kobayashi, Tsunenobu Kimoto
Abstract: We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with various thicknesses, grown on 4H-SiC substrates. The appearance of broad phonon modes at ~1150–1250 cm-1 in p-polarized light and their disappearance in s-polarized light confirmed that the phonon modes at ~1150–1250 cm-1 originated from surface polaritons (SPPs). For the thin SiO2 film (8-nm thick), the peak frequency of the transverse optical (TO) phonon in the SiO2 film on the 4H-SiC substrate was observed at ~1080 cm-1 and was higher than that in SiO2 films on the Si substrate (1074 cm-1). This suggested that the thin SiO2 film (8-nm thick) is under compressive stresses at the interface between the SiO2 film and SiC substrate. On the other hand, for the thick SiO2 films (85 and 130-nm thick), the TO phonon peak frequency tended to shift toward lower frequencies with increasing oxide layer thickness. The CL measurement indicated that the CL peak intensity at ~640 nm, attributed to non-bridging oxidation hole centers (NBOHCs), became stronger with increasing oxide layer thickness, relative to that of the CL peaks at ~460 and 490 nm due to oxygen vacancy centers (OVCs). By comparing the FT-IR and CL measurements, we concluded that the TO phonon red-shift with increasing oxide layer thickness can mainly be attributed to an increase in inhomogeneity with increasing oxide layer thickness for the thick SiO2 films.
460
Authors: Masanobu Yoshikawa, Keiko Inoue, Junichiro Sameshima, Hirohumi Seki
Abstract: We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.
273
Authors: Keiko Inoue, Takeshi Nakagawa, Masanobu Yoshikawa, Noriyuki Hasuike, Hiroshi Harima
1357
Authors: Masanobu Yoshikawa, Masataka Murakami, Takaya Fujita, K. Inoue, K. Matsuda, H. Ishida, Hiroshi Harima
Abstract: We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm.
1305
Authors: Takaya Fujita, Takeshi Mitani, Masataka Murakami, Masanobu Yoshikawa, Hiroshi Harima
Abstract: We have studied InGaN single-quantum-well (SQW) films using atomic force microscopy (AFM) and cathodoluminescence (CL) spectroscopy. It has been found that a screw dislocations (SDs) distribution in the height image by AFM is well correlated with images of the CL spectra at about 440nm assigned to the spontaneous emission from the InGaN SQW. These results at least mean an existence of non-radiative recombination centers within the InGaN SQW films. It has been also found that the average period of the peak-intensity and the FWHM change is smaller than that of the peak-wavelength change assigned to InN mole fluctuations. These results suggest that the exciton diffusion length of the spontaneous emission at about 440nm is not larger than the average period of InN mole fluctuations in the InGaN SQW.
1309
Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa
Abstract: Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.
615
Authors: Takeshi Mitani, Ryo Hattori, Masanobu Yoshikawa
Abstract: Depth profiles of ion-implantation induced defect centers have been investigated by cross-sectional CL measurements in the energy range from visible to near infrared. CL observation has shown that point defects diffused out from implanted region to ~10 µm depth during activation annealing. Annealing temperature dependence of the depth distribution of CL intensity of these defects has suggested that structural transformation of point defects proceeds as “silicon vacancy (VSi) → carbon vacancy-antisite pair (VC-CSi ; UD2) → antisite pair (CSi-SiC ; DI)”.
481
Authors: Ryuichi Sugie, Masanobu Yoshikawa, Shin Harada, Yasuo Namikawa
Abstract: The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.
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