Papers by Author: Mats Kleverman

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Authors: L.I. Murin, V.P. Markevich, J. Lennart Lindström, Mats Kleverman, J. Hermansson, T. Hallberg, Bengt Gunnar Svensson
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Authors: Hermann G. Grimmeiss, Mats Kleverman
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Authors: Ivan G. Ivanov, A. Stelmach, Mats Kleverman, Erik Janzén
Abstract: The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 ± 0.2 meV.
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Authors: J. Olajos, B. Bech Nielsen, Mats Kleverman, P. Omling, P. Emanuelsson, Hermann G. Grimmeiss
397
Authors: P. Liberski, T. Hallberg, Bengt Gunnar Svensson, J. Lennart Lindström, Mats Kleverman
385
Authors: S. Ghatnekar-Nilsson, Mats Kleverman, P. Emanuelsson, Hermann G. Grimmeiss
171
Authors: J. Lennart Lindström, T. Hallberg, J. Hermansson, L.I. Murin, V.P. Markevich, Mats Kleverman, Bengt Gunnar Svensson
297
Authors: Hermann G. Grimmeiss, Mats Kleverman, J. Olajos
341
Authors: Hermann G. Grimmeiss, Mats Kleverman
277
Showing 1 to 10 of 17 Paper Titles