Papers by Author: Michael A. Capano

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Authors: Byeung C. Kim, Michael A. Capano
Abstract: Cubic silicon carbide (3C-SiC) growth using Pendeo-epitaxy technique was successfully achieved on Si(001) substrates. 3C-SiC was grown by chemical vapor deposition (CVD) with silane and propane as precursors. Effects of underlying stripes and seed 3C-SiC layers thickness on PE 3C-SiC films were investigated. Root mean square (RMS) measurements using atomic force microscope (AFM) showed that surface morphology of PE 3C-SiC films remarkably improves with an increase of the seed 3C-SiC layer thickness, and the values were from 9.8 nm for 3 µm thick seed layer to 0.5 nm for 10 µm thick seed layer thickness. Additionally, domain boundary densities were counted, and the values also strongly depend on the seed layer thickness: from >1500/mm2 for 3 µm seed layer thickness to <100/mm2 for 10 µm seed layer thickness. Pendeo-epiaxial growth profiles with various width/separation dimensions of stripes were also investigated, and stripes with width of 10 µm and separation of 5 µm provide the best profile and process viability.
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Authors: Stephen E. Saddow, John R. Williams, Tamara Isaacs-Smith, Michael A. Capano, James A. Cooper, Michael S. Mazzola, A.J. Hsieh, Jeff B. Casady
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Authors: Y. Li, James A. Cooper, Michael A. Capano
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Authors: J. Spitz, M.R. Melloch, James A. Cooper, Michael A. Capano
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Authors: Michael A. Capano, James A. Cooper, M.R. Melloch, Adam W. Saxler, W.C. Mitchel
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Authors: Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel
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Authors: Michael A. Capano, A.R. Smith, Byeung C. Kim, E.P. Kvam, S. Tsoi, A.K. Ramdas, James A. Cooper
Abstract: 3C-SiC p-type epilayers were grown to thicknesses of 1.5, 3, 6 and 10 μm on 2.5° off-axis Si(001) substrates by chemical vapor deposition (CVD). Silane and propane were used as precursors. Structural analysis of epilayers was performed using transmission electron microscopy (TEM), high-resolution x-ray diffractometry (HRXRD), and Raman spectroscopy. TEM showed defect densities (stacking faults, twins and dislocations) decreasing with increasing distance from the SiC/Si interface as the lattice mismatch stress is relaxed. This observation was corroborated by a monotonic decrease in HRXRD peak width (FWHM) from 780 arcsecs (1.5 μm thick epilayer) to 350 arcsecs (10 μm thick epilayer). Significant further reduction in x-ray FWHM is possible because the minimum FWHM detected is greater than the theoretical FWHM for SiC (about 12 arcsecs). Raman spectroscopy also indicates that the residual biaxial in-plane strain decreases with increasing epilayer thickness initially, but becomes essentially constant between 6 and 10 μm. Structural defect density shows the most significant reduction in the first 2 μm of growth. Phosphorus implantation was used to generate n+/p junctions for the measurement of the critical electric field in 3C-SiC. Based on current-voltage analyses, the critical electric field in p-type 3C-SiC with a doping of 2x1017 cm-3 is 1.3x106 V/cm.
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Authors: Kung Yen Lee, Wen Zhou Chen, Michael A. Capano
Abstract: In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes (SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forward characteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP, so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities are eliminated or improved after CMP. Therefore, leakage current induced by barrier-height inhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots inside the active areas exhibits double barriers before CMP. This excludes that carrots are a cause of barrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at low bias and increases breakdown voltage due to the reduction of thermionic field emission and elimination of local enhanced electric fields.
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