Papers by Author: Michael Seibt

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Authors: Philipp Saring, Anna Lena Baumann, Stefan Kontermann, Wolfgang Schade, Michael Seibt
Abstract: This paper investigates the influence of different number of laser pulses on contact behavior and conductivity of the surface layer of femtosecond laser microstructured, sulfur-doped silicon. Single shot laser processed silicon (Pink Silicon) is characterized by low surface roughness, whereas five shot laser processed silicon (Grey Silicon) has an elevated sulfur content with a surface roughness low enough to maintain good contacting. To laterally confine the laser induced pn-junction part of the Grey Silicon sample surface is etched off. The etching depth is confirmed to be sufficient to completely remove the active n-type sulfur layer. While Pink Silicon shows little or no lateral conductivity within the laser processed layer, Grey Silicon offers acceptable conductivity, just as expected by the fact of having incorporated a higher sulfur dopant content. Recombination dominates the irradiated regions of Pink Silicon and suppresses excess charge carrier collection. Grey Silicon, while showing sufficient lateral conductivity, still shows regions of lower conductivity, most likely dominated by the laser irradiation-induced formation of dislocations. According to our results, the optimum laser pulse number for electrical and structural properties is expected to be in the range between one and five laser pulses.
358
Authors: M.A. Falkenberg, D. Abdelbarey, Vitaly V. Kveder, Michael Seibt
Abstract: The efficiency of solar cells produced from crystalline silicon materials is considerably affected by the presence of metal impurities. In order to reduce the concentration of metal impurities, gettering processes as phosphorus diffusion gettering (PDG) and aluminum gettering (AlG) are routinely included in solar cell processing. Further development and optimization of gettering schemes has to ground on physics-based simulations of gettering processes. In this contribution we use quantitative simulations to compare the efficiency and kinetics of PDG and AlG in the presence of precipitates for interstitially dissolved metals, like iron, at different gettering conditions. Recently measured segregation coefficients of iron in liquid AlSi with respect to crystalline silicon are used in order to compare with PDG under typical conditions. It is shown that kinetics of both, PDG and AlG, can be separated into two regimes: (i) at low temperatures kinetics are limited by precipitate dissolution, and (ii) at high temperatures kinetics of AlG is mainly limited by metal impurity diffusion while phosphorus in-diffusion is the limiting factor of PDG.
229
Authors: Michael Seibt, Yue Long Huang, B. Plikat
377
Authors: Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt, Andreas Sattler
361
Authors: R. Khalil, Vitaly V. Kveder, Wolfgang Schröter, Michael Seibt
Abstract: Deep electronic states associated with iron silicide precipitates have been studied by means of deep-level transient spectroscopy. The observed spectra show the characteristic features of bandlike states at extended defects. From the stability of the states on annealing at moderate temperature they are tentatively attributed to precipitate-matrix interfaces.
109
Authors: Yue Long Huang, Michael Seibt, Wolfgang Schröter
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