Papers by Author: Min Seok Kang

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Authors: Min Seok Kang, Kevin Lawless, Bong Mook Lee, Veena Misra
Abstract: We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VT shift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3 interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VT shift are realized.
Authors: Min Seok Kang, Bong Mook Lee, Veena Misra
Abstract: This study reports the electrical characteristics and reliability of the atomic layer deposited SiO2 on the 4H-SiC substrate. By controlling the thickness of SiO2 in each ALD cycle, improved device properties like mobility and gate leakage were obtained as compared to the single deposition. Moreover, the optimized process dramatically reduces the threshold voltage shift under positive and negative bias stresses. This improvement can be attributed to the effective removal of unreacted metal-organic precursors, active traps, and broken bonds in the ALD SiO2 dielectrics as well as reduction in interface state density at SiC/SiO2 interface.
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