Papers by Author: Min Wang

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Authors: Wen Zhuang Lu, Dun Wen Zuo, Min Wang, Feng Xu
Abstract: Electroplated Cr, Ni and Cu were used as interlayer for chemical vapor deposition (CVD) diamond coating on WC–Co cemented carbide cutting tools. The electroplated interlayers were studied by Scanning Electron Microscope (SEM), Electron Probe Micro Analyzer (EPMA) and X-ray diffraction (XRD). The CVD diamond coatings were studied by SEM and Raman Scattering Spectroscopy (Raman). The experimental results show that there is diffusion bonded interface between electroplated layer and WC-Co substrate after H plasma treatment, the bond between electroplated layers and WC-Co substrate changes from mechanical bond to metallurgical bond and the adhesion becomes stronger. Electroplated Cr interlayer forms new phases of Cr3C2 and Cr7C3 under CVD conditions, while electroplated Ni and Cu interlayers do not form carbides under CVD conditions. Cr carbides have good chemical compatibility to diamond, and they are propitious to diamond nucleation and growth during the deposition period. The diamond crystal microstructure, diamond quality and adhesion on Cr interlayer are better than those on electroplated Ni and Cu interlayers.
Authors: Hong Jun Wang, Dun Wen Zuo, Hong Miao, Hong Feng Wang, Min Wang
Abstract: The effects of discharge parameters on micro-surface topography in mirror-like surface electrical discharge machining (EDM) process were investigated, and the optimization scheme was obtained. The realization of the process parameters and their effects were analyzed by the Taguchi method. The surface roughness amd 2D micro-surface topography were measured. An L16 (44×23) Taguchi standard orthogonal array was chosen for the design of experiments. The level of importance of the parameters parameters on surface roughness was determined by using analysis of variance (ANOVA). The experimental results confirmed that peak current and open discharge voltage have more influence on the surface roughness on mirror-like surface EDMed workpiece in comparison with pulse duration and pulse off-time.
Authors: Wen Zhuang Lu, Dun Wen Zuo, Min Wang, Feng Xu
Abstract: Chemical vapor deposition (CVD) diamond coatings were deposited on cemented carbide cutting cools by an electron-assisted hot filament chemical vapor deposition (EACVD) equipment developed by the authors. The CVD diamond coatings were studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that CH4 concentration in the source gas performs great influence on the micro-structure, surface roughness, composition, residual stress and adhesion of the CVD diamond coatings. The increase of CH4 concentration results the change of diamond crystal from {111} orientation to {100} orientation, the decrease of the surface roughness and the increase of sp2 carbon in the CVD diamond coatings. A residual compressive stress exists in the CVD diamond coatings. The residual stress decreases with increasing CH4 concentration. A higher or lower CH4 concentration tends to reduce adhesion stress of the continuous CVD diamond coatings.
Authors: Ming Wang, Kang Min Zhong, Dun Wen Zuo, Min Wang
Abstract: Nowadays, the research on the greenization of clamping technology obviously lags the research of green cutting, green machine tool etc. This paper provides a new clamping system to clamp the workpiece by the green fast heating/cooling adverse-change semiconductor technology and temperature controllability to thermal sensitive medium with volume effect. This clamping system has a low speed operating part, few moving parts, low medium leakage and noise pollution and it is convenient to be flexible configuration of multi-place, multi-workpiece and multi-direction clamping. Furthermore, the clamping system can use the sensors of temperature, pressure and displacement to collect the relative data and process them by computer, then intelligently control the clamp force and clamping displacement.
Authors: Rong Fa Chen, Dun Wen Zuo, Bing Kun Xiang, Min Wang
Abstract: We investigated the residual stress in diamond films grown on molybdenum substrates as a function of different places in the same large sample. The diamond film wafers of Ф60 mm diameter were deposited at 900°C by high power DC arc plasma jet CVD method using a gas mixture of methane (1.8% vol.) and hydrogen ( 90% vol.). The grain sizes, obtained from the top view scanning electron microscopy (SEM) images, were found to become larger from center to the border in the same sample, and the x-ray diffraction indicated that the intensity of characteristic spectroscopy in same diamond film was changed from (220) to (111) with the increases of (311). Profile curves presented the appreciable difference of surface texture from center to edge. The film had 4.3GPa of residual compressive stress. Examination of the Raman spectra of the film revealed that residual stress in the film of up to approximately 0.70GPa, and the Raman spectroscopy shifts from 1332.99cm-1 at the center to 1331.17cm-1 at the border, which means the stress mode changed from compressive to tensile. These demonstrated a significant inhomogeneity of stress in diamond films. The differences have been attributed partly to high temperature inhomogeneity arc jet during growth and morphological aspects of the film growth. The relationships between stress and methane concentration, and substrate temperature are discussed in detail.
Authors: Yu Li Sun, Dun Wen Zuo, Duo Sheng Li, Rong Fa Chen, Min Wang
Abstract: Hardness, elastic modulus and scratch resistance of single silicon wafer are measured by nanoindentation and nanoscratching using a nanoindenter. Fracture toughness is measured by indentation using a Vickers indenter. The results show that the hardness and elastic modulus at a peak indentation depth of 100 nm are 12.6 and 166.5 GPa respectively. These values reflect the properties of the silicon wafer, the bulk material. The fracture toughness value of the silicon wafer is 0.74 Mpa·m1/2. The material removal mechanisms are seen to be directly related to the normal force on the tip. The critical load and scratch depth estimated from the scratch depth profile after the scratching and the friction profile are 138.64 mN and 54.63 nm respectively. If the load and scratch depth are under the critical values, the silicon wafer will undergo plastic flow rather than fracture. The critical scratch depth is different from that calculated from the formula of critical-depth-of-cut described by Bifnao et al and some reasons are given.
Authors: Chao Li, Min Wang, Dun Wen Zuo
Abstract: A new principle and technology of point form grinding for quadratic surface flank of twist drill was investigated. It broke through the traditional straight-line generator grinding method for the conical and the spiral drills. The principle of implementation mechanism was given in the paper. The trueness and feasibility of the method had been approved in the experiments, and the quadratic surface twist drill such as hyperboloid, ellipsoid and hyperboloid-ellipsoid compound flank had been grinded on the mechanism.
Authors: Guang Ming Jiao, Dun Wen Zuo, Min Wang
Abstract: The development history and situation of Chinese manufacturing enterprise informationization are reviewed in this paper. Based on practice, the problems of Chinese enterprise informationization are discussed on in view of understanding, methods and implementation, and difficulties are explained. At last, methods of Enterprise Information are proposed.
Authors: Feng Xu, Dun Wen Zuo, Wen Zhuang Lu, Min Wang, Hai Yu Zhang
Abstract: High residual stress that includes thermal and intrinsic stress is an obstacle to the further application of chemical vapor deposited diamond thick film. In this paper, CVD diamond thick film was deposited on silicon substrate by hot filament chemical vapor deposited (HFCVD) system. The finite element analysis (FEA) simulation and experimental research were carried out on the thermal and intrinsic stress of large area diamond thick film. The FEA model is set up to investigate the distribution and magnitude of thermal stress. The intrinsic stress is studied by X-Ray diffraction “sin2ψ” method. The thermal stress and intrinsic stress are both compression stress. Simulation results show the discontinuous sharp of the diamond film result in the stress concentration and low cooling velocity is a good way to reduce thermal stress. The intrinsic stress is correlative with the microstructure and non-diamond component of diamond film. The origin of the intrinsic stress is discussed in detail in this paper.
Authors: Ming Min Huang, Dun Wen Zuo, Wen Zhuang Lu, Feng Xu, Min Wang
Abstract: The performance of Atomic Force Microscope (AFM) is greatly determined by the quality of its probe. Nowadays, probes of diamond tips have become more and more popular than silicon ones, and have been widely used in industries. In this paper, research about the fabricating of nanocrystalline diamond (NCD) coated AFM probe has been done using Hot-Filament Chemical Vapour Deposition (HFCVD) technique. The results showed that NCD films have been grown on the probe. Problems about the growth of NCD on the tips have been discussed. The optimum parameters have also been proposed. This research can provide reference for the further experiments on the fabrication of NCD coated tips.
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