Papers by Author: Moritz Beleites

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Authors: Robert Göckeritz, Denny Schmidt, Moritz Beleites, Gerhard Seifert, Stefan P. Krischok, Marcel Himmerlich, Jörg Pezoldt
Abstract: Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.
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