Papers by Author: N.A. Sobolev

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Authors: Alexander A. Lebedev, N.A. Sobolev
715
Authors: N.A. Sobolev, O.V. Alexandrov, B.N. Gresserov, G.M. Gusinskii, V.O. Naidenov, E.I. Sheck, V.I. Stepanov, Yu.V. Vyzhigin, L.F. Chepik, E.P. Troshina
83
Authors: N.A. Sobolev, A.M. Emel'yanov, R.N. Kyutt, Yu.A. Nikolaev
371
Authors: N.A. Sobolev, A.M. Emel'yanov, Yu.A. Kudryavtsev, R.N. Kyutt, M.I. Makovijchuk, Yu.A. Nikolaev, E.O. Parshin, V.I. Sakharov, I.T. Serenkov, Elena I. Shek, K.F. Shtel'makh
257
Authors: V.I. Vdovin, N.A. Sobolev, D.V. Denisov, Elena I. Shek
Abstract: Structural defects in Si:Er layers grown by molecular beam epitaxy have been studied by transmission electron microscopy. Two kinds of second phase precipitates are the main defects in the layers with Er concentration ≥ 2х1019 cm-3: ball-shaped precipitates (4-25 nm) of metallic Er localized at the layer-substrate interface and platelet precipitates of ErSi2 extending through the whole layer. We studied the effect of Er concentration (8х1018 - 4х1019 cm-3) and growth temperature (400 - 700°C) on the defect generation. The peculiarities of defect generation in MBE Si:Er layers implanted with B+ ions were also studied.
779
Authors: F.P. Korshunov, T.A. Prokhorenko, N.A. Sobolev, E.A. Kudriavtseva
51
Authors: T.M. Tkacheva, G.N. Petrov, E.P. Shabalin, V.G. Golubev, G.I. Kropotov, Elena I. Shek, N.A. Sobolev
1153
Authors: Valentin V. Emtsev, Boris A. Andreev, D.S. Poloskin, N.A. Sobolev, Elena I. Shek
1515
Authors: N.A. Sobolev, Yu.V. Vyzhigin, V.V. Eliseev, V.A. Kostylev, V.M. Likunova, E.I. Sheck
181
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