Papers by Author: P.G. Baranov

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Authors: P.G. Baranov, Nikolai G. Romanov
1207
Authors: Ivan V. Ilyin, Alexandra A. Soltamova, V.A. Soltamov, V.A. Khramtsov, E.N. Mokhov, P.G. Baranov
Abstract: Electron paramagnetic resonance (EPR) at X-band (9.4 GHz) and Q-band (35 GHz) have been used to study defects in two samples of AlN monocrystals, grown by a sublimation sandwich method. These investigations reveal the presence of Fe2+ impurities in the reddish sample. The spectra of substitutional Fe2+ are highly anisotropic and could be observed even up to the room temperature. After illumination the signals showing the DX behavior were detected in the same sample. We assume these signals to arise due to the presence of the shallow donor center namely the isolated substitutional oxygen ON occupying the nitrogen position. In the second slightly amber-coloured sample EPR measurements before and after X-ray showed the presence of a deep-donor center which was assumed to be nitrogen vacancy VN. Based on thermoluminescence measurements the depth of the level was estimated to 0.45-0.5 eV.
1195
Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov
1539
Authors: P.G. Baranov, Ivan V. Ilyin, E.N. Mokhov
607
Authors: Ivan V. Ilyin, E.N. Mokhov, P.G. Baranov
521
Authors: Ivan V. Ilyin, Marina V. Muzafarova, E.N. Mokhov, Vladimir Ilich Sankin, P.G. Baranov, S.B. Orlinskii, J. Schmidt
Abstract: P6 and P7 centers, which are responsible for semi-insulating properties of SiC, were shown to be neutral Si-C divacancies (VSi-VC)o having a triplet ground state. The EPR experiments that were performed at very low temperatures and in complete darkness exclude the possibility of a thermal or optically excited triplet state and, as a result, the existing model of excited triplet state P6 and P7 centers was discarded. The optical alignment process which induces the spin polarization of the ground triplet 3A state of the P6, P7 centers in SiC was interpreted to be caused by strong spin selectivity of the intersystem crossing (ISC) nonradiative transitions from an excited 3E state to a metastable singlet 1A state. The luminescence and optical absorption are caused by transitions between spin sublevels of 3A and 3E states. The analogy in properties of a divacancy in SiC and the N-V defect in diamond allows considering the divacancy in SiC as a potential defect for the single defect spectroscopy.
535
Authors: J. Schmidt, T. Matsumoto, O.G. Poluektov, A. van Duijn-Arnold, Toshiyuki Ikoma, P.G. Baranov, E.N. Mokhov
587
Authors: J. Schmidt, T. Matsumoto, O.G. Poluektov, Alexander Arnold, Toshiyuki Ikoma, P.G. Baranov, E.N. Mokhov
703
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